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Comparison of Amorphous and Polycrystalline Tungsten Nitride Diffusion Barrier for MOCVD-Cu Metallization

Published online by Cambridge University Press:  21 February 2011

Chul Soon Kwon
Affiliation:
Micro Process Development, Samsung Electronics, 82–3, Dodang-Dong, Wonmi-Ku, Buchun, Kyunggi-Do, 421–130, Korea
Dong Joon Kim
Affiliation:
Department of Metallurgical Eng., Hanyang Univ., 17, Haengdang-Dong, Sungdong-Ku, Seoul, 133–791, Korea
Chang Woo Lee
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, Korea
Yong Tae Kim
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, Korea
In-Hoon Choi
Affiliation:
Department of Material Science, Korea Univ., 5–1, Anam-Dong, Sungbuk-Ku, Seoul 136- 701, Korea
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Abstract

An amorphized tungsten nitride diffusion barrier is compared with that of polycrystalline tungsten nitride preventing the diffusion of copper into Si during post annealing processes at 600 – 800 °C for 30 min. Experimental evidence such as RBS, TEM, XRD measurements shows that the amorphized tungsten nitride layer perfectly blocks the expeditious diffusion of the Cu film due to the amorphous grain boundaries stuffed with N impurities.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

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Comparison of Amorphous and Polycrystalline Tungsten Nitride Diffusion Barrier for MOCVD-Cu Metallization
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