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Comparative Study on Reliability of InP/InGaAs Heterojunction Bipolar Transistors with Highly Zn- and C-Doped Base Layers

Published online by Cambridge University Press:  31 January 2011

Atsushi Koizumi
Affiliation:
koizumi@ee.uec.ac.jp
Kazuki Oshitanai
Affiliation:
ooshitanai@w3-4f5f.ee.uec.ac.jp, The University of Electro-Communications, Electronic Engineering, Chofu, Japan
Jaesung Lee
Affiliation:
jaesung@w3-4f5f.ee.uec.ac.jp, The University of Electro-Communications, Electronic Engineering, Chofu, Japan
Kazuo Uchida
Affiliation:
uchida@ee.uec.ac.jp, The University of Electro-Communications, Electronic Engineering, Chofu, Japan
Shinji Nozaki
Affiliation:
nozaki@ee.uec.ac.jp, The University of Electro-Communications, Electronic Engineering, Chofu, Tokyo, Japan
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Abstract

The reliability of InP/InGaAs heterojunction bipolar transistors (HBTs) with highly carbon-doped and zinc-doped InGaAs base layers grown by metal-organic vapor phase epitaxy has been investigated. The Raman spectroscopy reveals that the post-growth annealing for the carbon-doped InGaAs base improves the crystallinity to become as good as that of the zinc-doped InGaAs base. However, the photoluminescence intensity remains lower than that of the zinc-doped InGaAs even after the post-growth annealing. The current gains of the carbon- and zinc-doped base InP/InGaAs HBTs are 63 and 75, respectively, and they are affected by the base crystallinity. After the 15-min current stress test, the current gains decreased by 40 and 3% from the initial current gains for zinc- and carbon-doped base HBTs, respectively, are observed. These results indicate that the carbon-doped base HBT is much more reliable than that of zinc-doped base HBT, though it has a lower current gain.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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