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A Chemical Perspective of GaN Polarity: The use of Hydrogen Plasma Dry Etching Versus NaOH Wet Etching to Determine Polarity

Published online by Cambridge University Press:  01 February 2011

Maria Losurdo
Affiliation:
Institute of Inorganic Metodologies and Plasmas -CNR, sect. of Bari via Orabona, 4- 70126 Bari, Italy
MariaMichela Giangregorio
Affiliation:
Institute of Inorganic Metodologies and Plasmas -CNR, sect. of Bari via Orabona, 4- 70126 Bari, Italy
Pio Capezzuto
Affiliation:
Institute of Inorganic Metodologies and Plasmas -CNR, sect. of Bari via Orabona, 4- 70126 Bari, Italy
Giovanni Bruno
Affiliation:
Institute of Inorganic Metodologies and Plasmas -CNR, sect. of Bari via Orabona, 4- 70126 Bari, Italy
Gon Namkoong
Affiliation:
Georgia Institute of Technology, School of Electrical and Computer Engineering, Microelectronic Research Center, 791 Atlantic Dr., Atlanta, GA 30332-0269, USA
W. Alan Doolittle
Affiliation:
Georgia Institute of Technology, School of Electrical and Computer Engineering, Microelectronic Research Center, 791 Atlantic Dr., Atlanta, GA 30332-0269, USA
April S. Brown
Affiliation:
Georgia Institute of Technology, School of Electrical and Computer Engineering, Microelectronic Research Center, 791 Atlantic Dr., Atlanta, GA 30332-0269, USA
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Abstract

The use of dry hydrogen plasma etching is evaluated for determination of GaN polarity and critically compared to wet etching in NaOH. It is shown that hydrogen plasma etching is effective in revealing inversion domains (IDs) and some types of dislocations. This is because the surface morphology is unchanged by the hydrogen treatment, and, hence, the surface reactivity is not masked.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

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A Chemical Perspective of GaN Polarity: The use of Hydrogen Plasma Dry Etching Versus NaOH Wet Etching to Determine Polarity
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