Skip to main content Accessibility help
×
Home
Hostname: page-component-568f69f84b-2wqtr Total loading time: 0.197 Render date: 2021-09-19T02:09:41.615Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Chemical Effects of substrate Temperature and Feed Gas Composition on Ion Beam Deposited AlN and AlN:H

Published online by Cambridge University Press:  21 February 2011

L. Huang
Affiliation:
Materials Science Program, Washington State University, Pullman, WA 99164-4620, USA
X. D. Wang
Affiliation:
Materials Science Program, Washington State University, Pullman, WA 99164-4620, USA
K. W. Hipps
Affiliation:
Materials Science Program, Washington State University, Pullman, WA 99164-4620, USA
U. Mazur
Affiliation:
Materials Science Program, Washington State University, Pullman, WA 99164-4620, USA
J. T. Dickinson
Affiliation:
Materials Science Program, Washington State University, Pullman, WA 99164-4620, USA
R. Heffron
Affiliation:
Materials Science Program, Washington State University, Pullman, WA 99164-4620, USA
Get access

Abstract

Direct ion beam sputter deposition of alN is studied using both pure nitrogen and a 75% N2/25% H2 mixture as the feed gas for the ion gun. the chemical characteristics of these films are probed using infrared spectroscopy and chemical etching. the presence of al-N2 species is associated with reactive and highly defective films. the presence of NHX species increases by several orders of magnitude the rate at which alN film are etched by base. However, stoichiometric and low defect alN films prepared by depositing alN:H onto substrates heated to 200 °C have reactivities similar to the best alN films produced in the absence of hydrogen.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Yim, W.M., Stofko, E.J., Zanzucchi, P.J., Pankove, J.I., M. Ettenberg, Gilbert, S.L., J. appl. Phys. 44, 292 (1973).CrossRefGoogle Scholar
2 Sheppard, L.M., Ceramic Bulletin 69, 1801 (1990).Google Scholar
3 Ivanko, A.A. in Handbook of Hardness Data; edited by Samsonov, G.V. (Keter Press, Jerusalem, 1971).Google Scholar
4 Mazur, U., work in progress.Google Scholar
5 Azema, N., Durand, R., Dupuy, C., and Cot, L., J. Euro. Ceram. Soc. 8, 291 (1991).CrossRefGoogle Scholar
6 Hatwar, K. and Pian, T.R., in Ion Beam Processing of Materials., edited by Hubler, G.K. and White, C.W. (Mater. Res. Soc. Symp. Proc. 121, Pittsburgh, PA, 1988), p. 557.Google Scholar
7 Katnani, A.D. and Papathomas, K.I., J. Vac. Sci. Technol. A 5, 1335 (1987).CrossRefGoogle Scholar
8 Bellosi, A., Landi, E., and Tampieri, A., J. Mater. Res. 8, 565 (1993).CrossRefGoogle Scholar
9 Wang, X.D., Hipps, K.W., and Mazur, U., Langmuir 8, 1347 (1992).CrossRefGoogle Scholar
10 Harper, J.M., Cuomo, J.J., and Hentzell, H.T., J. appl. Phys. 58, 550 (1985).CrossRefGoogle Scholar
11 Hentzell, H.T., Harper, J.M., and Cuomo, J.J., J. appl. Phys. 58, 556 (1985).CrossRefGoogle Scholar
12 Windischmann, H., Thin Solid Films 154, 159 (1987).CrossRefGoogle Scholar
13 Aita, C.R. and Tait, W.S., Nanostructured Materials 1, 269 (1992).CrossRefGoogle Scholar
14 Hasegawa, F., Takahashi, T., Kubo, K., and Nannichi, Y., Jap. J. Appl. Phys. 9, 1555 (1987).CrossRefGoogle Scholar
15 Mazur, U. Langmuir 6, 1331 (1990).CrossRefGoogle Scholar
16 Mazur, U. and Cleary, A. J. Phys. Chem. 94, 189 (1990).CrossRefGoogle Scholar
17 Wang, X.D., Hipps, K.W., and Ursula, Mazur, J. Phys. Chem. 96, 8485 (1992).CrossRefGoogle Scholar
18 Wang, X.D., Hipps, K.W., Dickinson, J.T., and Mazur, U., J. Mater. Res., 9, 1449 (1994).CrossRefGoogle Scholar
19 Wang, X.D., Jiang, W., Norton, M.G., and Hipps, K.W., Thin Solid Films, 251, 121 (1994).CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Chemical Effects of substrate Temperature and Feed Gas Composition on Ion Beam Deposited AlN and AlN:H
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Chemical Effects of substrate Temperature and Feed Gas Composition on Ion Beam Deposited AlN and AlN:H
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Chemical Effects of substrate Temperature and Feed Gas Composition on Ion Beam Deposited AlN and AlN:H
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *