Skip to main content Accessibility help
×
Home
Hostname: page-component-65dc7cd545-2sbtp Total loading time: 0.172 Render date: 2021-07-26T12:28:01.063Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Characterization of the SnO2/a-SiC:H Interface in Amorphous Silicon Solar Cell by C-f-T Measurements

Published online by Cambridge University Press:  21 February 2011

D. Caputo
Affiliation:
Dipartimento di Ingegneria Elettronica, Università di Roma 'La Sapienza' Via Eudossianal8, 00184 ROMA (Italy)
G. De Cesare
Affiliation:
Dipartimento di Ingegneria Elettronica, Università di Roma 'La Sapienza' Via Eudossianal8, 00184 ROMA (Italy)
F. Irrera
Affiliation:
Dipartimento di Ingegneria Elettronica, Università di Roma 'La Sapienza' Via Eudossianal8, 00184 ROMA (Italy)
F. Palma
Affiliation:
Dipartimento di Ingegneria Elettronica, Università di Roma 'La Sapienza' Via Eudossianal8, 00184 ROMA (Italy)
S. Salvatori
Affiliation:
Dipartimento di Ingegneria Elettronica, Università di Roma 'La Sapienza' Via Eudossianal8, 00184 ROMA (Italy)
R. Vincenzoni
Affiliation:
Dipartimento di Ingegneria Elettronica, Università di Roma 'La Sapienza' Via Eudossianal8, 00184 ROMA (Italy)
Get access

Abstract

In this paper we present a new method for the characterization of the interface between the transparent conductive oxide (TCO) and the p doped amorphous silicon carbide layer in solar cells. The method is based on electrical capacitance measurements versus frequency in the temperature range: 20K-200K. We use Schottky diode structures (TCO-p-i-Ag) containing the p-i structure actually present in solar cells. Analysis of capacitance at different frequencies allows one to calculate an“activation energy”. Activation energy, temperature, position and shape of the capacitance step can be related to the density of states in the p type material by a model here presented. The effects of the p layer thickness and of the carbon content are investigated. A large increase of activation energy at short thickness is found, which can be related to interface damage, increasing in material with high carbon content. The technique shows an high spatial resolution and has the advantage to investigate the material as grown in the actual device.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Grillo, G., Conte, R., della Sala, D, Galluzzi, F., Gramaccioni, G., Tomacello, R., Vittori, V., IEEE Trans. ED 36, 2829 (1989);CrossRefGoogle Scholar
2. Cohen, J. D., Semiconductor and Semimetal 21, Chap.2, edited by Pankove, J. I., (Accademie Press, Orlando Florida, 1984);Google Scholar
3. Madan, A., Le Comber, P. G., Spear, W. E., J. Non-Cryst. Solids 20, 239 (1976);CrossRefGoogle Scholar
4. Cohen, J. D., Lang, D. V., Horbison, J. P., Philos. Mag. B 25, 5285 (1980);Google Scholar
5. Crandall, R. S., Salamon, S. S., Xu, Yuerin, in Amorphous Silicon Technology, edited by Madan, A., Hamakawa, Y., Thompson, M.J., Taylor, P.C., LeComber, P.G., (Mat. Res. Soc. Proc, 219, Pittsburgh, PA, 1991), pp 557;Google Scholar
6. Spear, W. E., Cloude, C., Goldic, D., Le Comber, P. G., J. Non-Cryst. Solids 97&98, 15 (1987);CrossRefGoogle Scholar
7. Chiabrera, A., Solid-St. Electron., 15, 277, (1972);CrossRefGoogle Scholar
8. Street, R. A., Hvdrogenated amorphous silicon, (Cambridge University Press, Cambridge. 1991).CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Characterization of the SnO2/a-SiC:H Interface in Amorphous Silicon Solar Cell by C-f-T Measurements
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Characterization of the SnO2/a-SiC:H Interface in Amorphous Silicon Solar Cell by C-f-T Measurements
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Characterization of the SnO2/a-SiC:H Interface in Amorphous Silicon Solar Cell by C-f-T Measurements
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *