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Characterization of the carrier confinement for InGaN/GaN light emitting diode with multiquantum barriers

Published online by Cambridge University Press:  01 February 2011

Jen-Cheng Wang
Affiliation:
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, Taiwan, Republic of China.
Chung-Han Lin
Affiliation:
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, Taiwan, Republic of China.
Ray-Ming Lin
Affiliation:
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, Taiwan, Republic of China.
Tzer-En Nee
Affiliation:
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, Taiwan, Republic of China.
Bor-Ren Fang
Affiliation:
Nan Ya Photonics Incorporation, 55 Wei-Wang Street, Shu-Lin, Taipei, Taiwan, Republic of China.
Ruey-Yu Wang
Affiliation:
Nan Ya Photonics Incorporation, 55 Wei-Wang Street, Shu-Lin, Taipei, Taiwan, Republic of China.
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Abstract

Electroluminescence (EL) of InGaN/GaN multiquantum wells (MQW) in blue light-emitting diodes (LED) with multiquantum barriers (MQB) has been investigated. It was found that a device with an MQB structure exhibited better performance in carrier confinement, as well as higher temperature insensitivity, compared with the conventional MQW LEDs. The total cross sections ware obtained for those devices with and without MQBs, by fitting to the measurement of the spectral intensity. Not only the cross sections, but also the carrier lifetimes depending on temperature can therefore be mainly attributed to changes in Boltzmann population. All the detailed calculations are also agreement with the observations.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

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Characterization of the carrier confinement for InGaN/GaN light emitting diode with multiquantum barriers
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