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Characterization of Pulsed Laser Beam Mixed AuTe/GaAs Ohmic Contacts

Published online by Cambridge University Press:  25 February 2011

K. Wuyts
Affiliation:
Physics Department, K.U.Leuven, Celestijnenlaan 200D, B—3030 Leuven, Belgium
R.E. Silverans
Affiliation:
Physics Department, K.U.Leuven, Celestijnenlaan 200D, B—3030 Leuven, Belgium
M. Van Hove
Affiliation:
Imec, Kapeldreef 75, B—3030 Leuven, Belgium
Van Rossum Van Hove
Affiliation:
Imec, Kapeldreef 75, B—3030 Leuven, Belgium
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Abstract

The formation of pulsed laser processed AuTe/n—GaAs ohmic contacts was investigated using I—V measurements, Rutherford Backscattering, and Mössbauer spectroscopy. Ohmic contact resistances comparable to those of furnace processed AuTe and AuGe/GaAs contacts were measured; however, a much thinner intermixed layer was obtained by the laser processing. No evidence for the formation of a n++—GaAs layer could be derived from the experimental data. The results are more consistent with the model explaining the ohmic conduction mechanism by the formation of a graded heterojunction structure.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

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Characterization of Pulsed Laser Beam Mixed AuTe/GaAs Ohmic Contacts
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