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Characterization of Plzt on Platinum Electrodes for High Density Fram Application

Published online by Cambridge University Press:  10 February 2011

YongSoo Choi
Affiliation:
Department of Ceramic Engineering, YonSei University, Seoul, Korea
SooDoo Choe
Affiliation:
Department of Ceramic Engineering, YonSei University, Seoul, Korea
SeungHyun Kim
Affiliation:
Department of Ceramic Engineering, YonSei University, Seoul, Korea
ChangEun Kim
Affiliation:
Department of Ceramic Engineering, YonSei University, Seoul, Korea
DooYoung Yang
Affiliation:
Advanced Technology R&D Lab., LG Semicon Co. Ltd., Cheongju‐si, Korea
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Abstract

A new sol‐gel route to obtain PLZT thin film was developed by combining the advantage of 2‐methoxyethanol as a solvent and acetylacetone as a chelating agent. The sol maintained the same stable state as that of fresh synthesized sol even after 60 days of aging. The PLZT films spin coated onto a Pt/Ti/SiO2 substrate with 15% Pb excess and 7.5% La added sol showed well developed rosette microstructure of uniform grain sizes(0.3 ‐ 0.5 μm) and gave well behaved ferroelectric properties with the values of Ps, Pr, and Ec of 40 μC/cm2, 15 μ C/cm2, and 20 kV/cm respectively at 5V after 650 °C and above annealing. The degradation in polarization of 2.5% La doped PLZT thin film was found to be less than 20% up to 1012 cycles

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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Characterization of Plzt on Platinum Electrodes for High Density Fram Application
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