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Characterization of Platinum films Deposited by a Two-Step Magnetron Sputtering on SiO2/Si Substrates

Published online by Cambridge University Press:  10 February 2011

Dong-Su Lee
Affiliation:
Tong Yang Central Lab.,38-1 Jung, Kusung, Yongin, Kyungki 449-910, Korea
Dong-Yeon Park
Affiliation:
Tong Yang Central Lab.,38-1 Jung, Kusung, Yongin, Kyungki 449-910, Korea
Min Hong Kim
Affiliation:
Division of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
Dong-Il Chun
Affiliation:
Tong Yang Central Lab.,38-1 Jung, Kusung, Yongin, Kyungki 449-910, Korea
Jowoong Ha
Affiliation:
Tong Yang Central Lab.,38-1 Jung, Kusung, Yongin, Kyungki 449-910, Korea
Euijoon Yoon
Affiliation:
Division of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
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Abstract

In this study, defect-free Pt films with good adhesion were deposited on SiO2/Si substrates by a two-step magnetron sputtering. This method consists of the first sputtering step using Ar/O2 gas mixture and the second step using Ar. After two-step deposition, an annealing process was followed at 600-1,000 °C in ambient atmosphere. In the first step, oxygen containing Pt films were deposited. Oxygen incorporated in the Pt films completely diffused out during the high temperature annealing. After the annealing process, the film became dense without catastrophic failures such as hillock, pinhole or buckling. Adhesion strength of films produced by this process was good enough to pass a tape test. It is believed that the good adhesion and the observed microstructural evolution are related to the oxygen in Pt films introduced during the first sputtering step. Adhesion, microstructural evolution and the role of oxygen in Pt films are briefly discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

1. Haertling, G.H., J. Vac. Sci. Techonl. A 9(3), 414420 (1991).Google Scholar
2. Sheppard, L.M., Ceramic Bulletin 71(1), 8595 (1992).Google Scholar
3. Scott, J.F. and Paz De Araujo, C.A., Science 246, 14001405 (1989).Google Scholar
4. Al-Shareef, H.N., Gifford, K.D., Hem, P.D., Rou, S.H., Auciello, O., and Kingon, A.I., Integrated Ferroelectrics 3, 321332 (1993).Google Scholar
5. Hem, P.D., Rou, S.H., AI-Shareef, H.N., Ameen, M.S., Auciello, O., and Kingon, A.I., Integrated Ferroelectrics 2, 311325 (1992)Google Scholar
6. Nakamura, T., Nadao, Y., Kamisawa, A., and Takasu, H., Jpn. J. Appl. Phys. 33, 52075210, (1994).Google Scholar
7. Al-Shareef, H.N., Kingon, A.I., Chen, X., and Bellur, K.R., J. Mater. Res. 9(11), 29682975 (1994).Google Scholar
8. Park, K.H., Kim, C.Y., Jeong, Y.W., Kwon, H.J., Kim, K.Y., Lee, J.S., and Kim, S.T., J. Mater. Res. 10(7), 1790–94 (1995)Google Scholar
9. Spierings, G.A.C.M., Van Zon, J.B.A., Larsen, P.K., and Klee, M. Integrated Ferroelectrics 3, 283292 (1993).Google Scholar
10. CRC handbook of chemistry and Physics, 68th ed. (CRC Press, Inc. Boca Raton, Florida).Google Scholar