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Characterization of Grain Boundaries in Polycrystalline GaAs

Published online by Cambridge University Press:  15 February 2011

Michael G. Spencer ,
William J. Schaff  and
D. Ken Wagner
Michael G. Spencer
Affiliation:
Department of Electrical Engineering, Howard University, Washington, DC 20001
William J. Schaff
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853
D. Ken Wagner
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853
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Abstract

Examination of capacitance transients arising from the emission or capture of electrons at a charged GaAs grain boundary reveal for the first time the existence of discrete interface levels. The position of these levels in the bandgap and their associated capture cross sections are determined from the transients.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981 , 125
Copyright
Copyright © Materials Research Society 1982

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References

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