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Characterization of Eu- and Y-polytantalate Films Deposited by RF Diode Sputtering

Published online by Cambridge University Press:  11 February 2011

Vladimir S. Vasilyev ,
Alvin J. Drehman  and
Lionel O. Bouthillette
Vladimir S. Vasilyev
Affiliation:
Air Force Research Laboratory, Sensors Directorate, 80 Scott Drive, Hanscom AFB, MA 01731
Alvin J. Drehman
Affiliation:
Air Force Research Laboratory, Sensors Directorate, 80 Scott Drive, Hanscom AFB, MA 01731
Lionel O. Bouthillette
Affiliation:
Air Force Research Laboratory, Sensors Directorate, 80 Scott Drive, Hanscom AFB, MA 01731
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Abstract

Using radio frequency (RF) diode sputtering of sintered stoichiometric (Eu,Y)2O3:7Ta2O5 ceramic targets, thin films (0.2–0.6 m) of Eu- and Y-polytantalates, and their solid solution EuxY1-xTa7O19 were deposited on fused silica, Si (100) and sapphire (001) substrates under various sputtering conditions. As-grown films were amorphous, and were crystallized by post-annealing in oxygen at 900 to 1000 °C. The influences of deposition gases (Ar and O2-partial pressure) substrate material, deposition time, substrate temperature, and post-annealing time and temperature on the structural, morphological and photo-luminescence (PL) properties of Eu 3+-ions in the films have been studied and compared to properties of sintered (Eu,Y)Ta7O19 ceramic and EuTa7O19 single crystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 749: Symposium W – Morphological and Compositional Evolution of Thin Films , 2002 , W5.8
Copyright
Copyright © Materials Research Society 2003

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References

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