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Characterization of Cubic GaN Films Using An AlN/GaN Ordered Alloy on GaAs (100) by RF-MBE

Published online by Cambridge University Press:  11 February 2011

Junichi Shike
Affiliation:
High-Tech Research Center, Faculty of Science and Engineering, Teikyo University of Science and Technology, 2525 Yatsuzawa, Uenohara, Kitatsuru-gun, Yamanashi, 409–0193, Japan
Atsushi Shigemori
Affiliation:
High-Tech Research Center, Faculty of Science and Engineering, Teikyo University of Science and Technology, 2525 Yatsuzawa, Uenohara, Kitatsuru-gun, Yamanashi, 409–0193, Japan
Koichi Ishida
Affiliation:
High-Tech Research Center, Faculty of Science and Engineering, Teikyo University of Science and Technology, 2525 Yatsuzawa, Uenohara, Kitatsuru-gun, Yamanashi, 409–0193, Japan
Kiyoshi Takahashi
Affiliation:
High-Tech Research Center, Faculty of Science and Engineering, Teikyo University of Science and Technology, 2525 Yatsuzawa, Uenohara, Kitatsuru-gun, Yamanashi, 409–0193, Japan
Ryuhei Kimura
Affiliation:
High-Tech Research Center, Faculty of Science and Engineering, Teikyo University of Science and Technology, 2525 Yatsuzawa, Uenohara, Kitatsuru-gun, Yamanashi, 409–0193, Japan
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Abstract

High quality cubic GaN films were successfully grown on an AlN/GaN ordered alloy by RF-MBE. AlN/GaN ordered alloy is here employed instead of a AlGaN nucleation layer formed by nitridation of an AlGaAs buffer layer. Dominant cubic GaN epilayer (1.0 μm) growth was confirmed by insitu RHEED observations, AFM, TEM, PL and X-ray diffraction measurements.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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