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Characterization of Be-Implanted GaN Annealed at High Temperatures

Published online by Cambridge University Press:  15 February 2011

C. Ronning
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7919, Raleigh, NC, 27695, USA University of Göttingen, II. Physical Institute, Bunsenstr. 7-9, D-37073 Göttingen, Germany
K.J. Linthicum
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7919, Raleigh, NC, 27695, USA
E.P. Carlson
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7919, Raleigh, NC, 27695, USA
P.J. Hartlieb
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7919, Raleigh, NC, 27695, USA
D.B. Thomson
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7919, Raleigh, NC, 27695, USA
T. Gehrke
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7919, Raleigh, NC, 27695, USA
R.F. Davis
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7919, Raleigh, NC, 27695, USA
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Abstract

Single crystalline (0001) gallium nitride layers were implanted with beryllium and subsequently annealed within the range of 300-1100°C for 10-60 minutes under a flux of atomic nitrogen obtained using a rf plasma source. The nitrogen flux protected the GaN surface from decomposition in vacuum at high temperatures. SIMS measurements revealed that no long range diffusion of the implanted Be occurred at 900 or 1100°C. XRD spectra showed defect-related peaks in the as-implanted samples; these peaks disappeared upon annealing at 900°C and higher for 10 minutes. Photoluminescence (PL) measurements showed one new line at 3.35 eV which provided strong evidence for the presence of optically active Be acceptors.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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