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The Characteristics of Silicon Dioxide Deposited by Inductively Coupled Plasma Chemical Vapor Deposition at 150°C

Published online by Cambridge University Press:  15 February 2011

Su-hyuk Kang ,
Min-Cheol Lee ,
Kook-Chul Moon  and
Min-koo Han
Su-hyuk Kang
Affiliation:
School of Electrical Engineering (#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: mkh@snu.ac.kr
Min-Cheol Lee
Affiliation:
School of Electrical Engineering (#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: mkh@snu.ac.kr
Kook-Chul Moon
Affiliation:
School of Electrical Engineering (#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: mkh@snu.ac.kr
Min-koo Han
Affiliation:
School of Electrical Engineering (#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: mkh@snu.ac.kr
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Abstract

An ultra-low temperature processed silicon dioxide film has been fabricated by inductively coupled plasma chemical vapor deposition at 150°C using He/N2O/SiH4 mixture. The deposited silicon dioxide film exhibits a high breakdown field larger than 6MV/cm in case of high ICP plasma condition while the flat band voltage of the oxide film significantly shifted in the negative direction with increasing ICP power. In order to obtain both high electrical breakdown filed and the low flat-band voltage, excimer laser irradiation with the energy density of 430mJ/cm2 is employed. The oxide film irradiated by excimer laser exhibited considerably shifted in the positive direction without scarifying the breakdown characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 769: Symposium H – Flexible Electronics - Materials and Device Technology , 2003 , H6.18
Copyright
Copyright © Materials Research Society 2003

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