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Characteristics of Inter Poly Dielectric (IPD) Prepared by Plasma Oxidation Treatment of LP-CVD SiO2 Film

Published online by Cambridge University Press:  01 February 2011

Jung-hwan Kim
Affiliation:
jhwan01.kim@samsung.com, Samsung Electronics Co., LTD, Semiconductor Business, Hwaseong, Korea, Republic of
Yong-Seok Kim
Affiliation:
yongseok80.kim@samsung.com, Samsung Electronics Co., LTD, Semiconductor Business, Hwaseong, Korea, Republic of
Byong-Hyun Jang
Affiliation:
byonghyun.jang@samsung.com, Samsung Electronics Co., LTD, Semiconductor Business, Hwaseong, Gyeonggi-do, Korea, Republic of
Hyun Namkoong
Affiliation:
hyun.namkoong@samsung.com, Samsung Electronics Co., LTD, Semiconductor Business, Hwaseong, Gyeonggi-do, Korea, Republic of
Woo-Sung Lee
Affiliation:
afour.lee@samsung.com, Samsung Electronics Co., LTD, Semiconductor Business, Hwaseong, Gyeonggi-do, Korea, Republic of
Hun-Hyoung Leam
Affiliation:
hhleam.leam@samsung.com, Samsung Electronics Co., LTD, Semiconductor Business, Hwaseong, Gyeonggi-do, Korea, Republic of
Seok-Woo Nam
Affiliation:
ssw.nam@samsung.com, Samsung Electronics Co., LTD, Semiconductor Business, Hwaseong, Gyeonggi-do, Korea, Republic of
Chang-Jin Kang
Affiliation:
changjin.kang@samsung.com, Samsung Electronics Co., LTD, Semiconductor Business, Hwaseong, Gyeonggi-do, Korea, Republic of
Tae-Hyuk Ahn
Affiliation:
taehyuk.ahn@samsung.com, Samsung Electronics Co., LTD, Semiconductor Business, Hwaseong, Gyeonggi-do, Korea, Republic of
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Abstract

To improve the IPD reliability of NAND flash memory, plasma oxidation was introduced as the post-treatment process of ONO (Oxide/Nitride/Oxide) IPD. The LP-CVD SiO2 modified by plasma oxidation showed the excellent electrical properties. e.g., low leakage current, high breakdown voltage etc. By the analysis of Tof-SIMS and XRR, we could observe the several changes of physical characteristics such as the reduction of impurities (H, N etc.), the increase of oxide density, and the improvement of oxide surface roughness. We found out the appropriate treatment condition to be able to densify oxide layer without the addition of ONO Equivalent Oxide Thickness (EOT). The LP-CVD SiO2 prepared by plasma oxidation was used for the ONO IPD of 50nm NAND flash device and also compared with the conventional LP-CVD SiO2 in the aspect of the IPD reliability.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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References

[1]. Mori, S. et al., IEEE Trans. Electron Dev., 38, 386391, (1991)CrossRefGoogle Scholar
[2]. Lee, J. D. et al., IEEE Electron Device Letters, 23, 264266, (2002)CrossRefGoogle Scholar
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[5]. Chen, Y. Y. et al., IEEE Electron Letters, 28, 700702, (2007)CrossRefGoogle Scholar
[6]. Arakawa, T. et al., Appl. Surface science, 113/114, 605609, (1997)CrossRefGoogle Scholar

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