Skip to main content Accessibility help
×
Home
Hostname: page-component-55b6f6c457-kv5sj Total loading time: 0.182 Render date: 2021-09-28T15:36:49.168Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Characteristics and aging of SiC MOSFETs operated at very high temperatures

Published online by Cambridge University Press:  13 June 2014

Dean P. Hamilton
Affiliation:
School of Engineering, University of Warwick, CV4 7AL, United Kingdom.
Michael R. Jennings
Affiliation:
School of Engineering, University of Warwick, CV4 7AL, United Kingdom.
Craig A. Fisher
Affiliation:
School of Engineering, University of Warwick, CV4 7AL, United Kingdom.
Yogesh K. Sharma
Affiliation:
School of Engineering, University of Warwick, CV4 7AL, United Kingdom.
Stephen J. York
Affiliation:
Department of Physics, University of Warwick, CV4 7AL, United Kingdom.
Philip A. Mawby
Affiliation:
School of Engineering, University of Warwick, CV4 7AL, United Kingdom.
Get access

Abstract

Silicon carbide power devices are purported to be capable of operating at very high temperatures. Current commercially available SiC MOSFETs from a number of manufacturers have been evaluated to understand and quantify the aging processes and temperature dependencies that occur when operated up to 350°C. High temperature constant positive bias stress tests demonstrated a two times increase in threshold voltage from the original value for some device types, which was maintained indefinitely but could be corrected with a long negative gate bias. The threshold voltages were found to decrease close to zero and the on-state resistances increased quite linearly to approximately five or six times their room temperature values. Long term thermal aging of the dies appears to demonstrate possible degradation of the ohmic contacts. This appears as a rectifying response in the I-V curves at low drain-source bias. The high temperature capability of the latest generations of these devices has been proven independently; provided that threshold voltage management is implemented, the devices are capable of being operated and are free from the effects of thermal aging for at least 70 hours cumulative at 300°C.

Type
Articles
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Meisser, M., Hamilton, D. and Mawby, P.. DCB-based low-inductive SiC modules for high frequency operation. in Integrated Power Systems (CIPS), 2014 8th International Conference on. 2014. VDE .
Alatise, O., Parker-Allotey, N.A., Hamilton, D. and Mawby, P., IEEE Trans. on Power Electronics , 2012. 27(8): p. 38263833.CrossRef
Buttay, C., Materials Science and Engineering: B , 2011. 176(4): p. 283288.CrossRef
Ryu, S.H, A comparison of high temperature performance of SiC DMOSFETs and JFETs, in Silicon Carbide and Related Materials 2006 , Wright, N., et al. ., Editors. 2007, Trans Tech Publications Ltd: Stafa-Zurich. p. 775778.Google Scholar
Yu, L.C.C., IEEE Trans. on Device and Materials Reliability , 2010. 10(4): p. 418426.CrossRef
Tanimoto, S. and Ohashi, H., Physica Status Solidi (a), 2009. 206(10): p. 24172430.CrossRef
Kuchuk, A.V., Materials Science and Engineering B-Advanced Functional Solid-State Materials , 2009. 165(1-2): p. 3841.
Locatelli, M.L., IEEE Trans. on Power Electronics , 2014. 29(5): p. 22812288.CrossRef
Yao, Y.Y., IEEE Trans. on Components Packaging and Manufacturing Technology , 2012. 2(4): p. 539547.CrossRef
Kaplar, R., Degradation mechanisms and characterization techniques in silicon carbide MOSFETs at high temperature operation. Proc. Electrical Energy Storage Applications and Technologies, 2012: p. 121–124.
Hasanuzzaman, M., Solid-State Electronics , 2004. 48(10-11): p. 18771881.CrossRef
Lelis, A.J., IEEE Trans. on Electron Devices , 2008. 55(8): p. 18351840.CrossRef
Gurfinkel, M., Ultra-fast characterization of transient gate oxide trapping in SiC MOSFETs. 2007 Ieee International Reliability Physics Symposium Proceedings - 45th Annual. 2007, New York: Ieee. 462–466.
Matocha, K., Solid-State Electronics , 2008. 52(10): p. 16311635.CrossRef
Habersat, D.B., Lelis, A. and Green, R., Detection of Mobile Ions in the Presence of Charge Trapping in SiC MOS Devices, in Silicon Carbide and Related Materials 2011, Pts 1 and 2 , Devaty, R.P., et al. ., Editors. 2012, Trans Tech Publications Ltd: Stafa-Zurich. p. 461464.Google Scholar
Pierret, R.F., Field effect devices. 1983: Addison-Wesley.Google Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Characteristics and aging of SiC MOSFETs operated at very high temperatures
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Characteristics and aging of SiC MOSFETs operated at very high temperatures
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Characteristics and aging of SiC MOSFETs operated at very high temperatures
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *