Hostname: page-component-77c89778f8-gvh9x Total loading time: 0 Render date: 2024-07-21T12:04:55.486Z Has data issue: false hasContentIssue false
  • English
  • Français

Changes of IR Vibrational Absorption by Light Soaking in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  26 February 2011

Jin Jang ,
Seung Chul Park ,
Chang Geun Lee ,
Sung Chul Kim ,
Choochon Lee  and
Jung Kee Yoon
Jin Jang
Affiliation:
Dept. of Physics and Research Inst. for Basic Sciences, Kyung Hee University Dongdaemoon-ku, Seoul 131, Korea
Seung Chul Park
Affiliation:
Dept. of Physics and Research Inst. for Basic Sciences, Kyung Hee University Dongdaemoon-ku, Seoul 131, Korea
Chang Geun Lee
Affiliation:
Dept. of Physics and Research Inst. for Basic Sciences, Kyung Hee University Dongdaemoon-ku, Seoul 131, Korea
Sung Chul Kim
Affiliation:
Dept. of Physics and Research Inst. for Basic Sciences, Kyung Hee University Dongdaemoon-ku, Seoul 131, Korea
Choochon Lee
Affiliation:
Dept. of Physics Korea Advanced Inst. of Science and Technology, P.O.Box 150 Chongyangri, Seoul, Korea
Jung Kee Yoon
Affiliation:
Dept. of Physics Korea Advanced Inst. of Science and Technology, P.O.Box 150 Chongyangri, Seoul, Korea
Get access

Abstract

Light-induced changes in vibrational absorption of SiHn have been studied for a-Si:H films. The stretching mode absorption near 2000 cm−1 decreases after light exposure. The magnitude of the change increases as the substrate temperature is lowered, and little change is observed for a-Si:H films deposited above 200°C. From the changes both for the peak and the spectrum, it is suggested that the hydrogen in the bulk diffuses to the microvoids, where it can combine to form H2 in low substrate temperature sample. The B-H modes increase after light soaking, Which is related with the increase in doping efficiency of boron, which is confirmed from the conductivity change with time during illumination.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 595
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Jang, J. and Lee, C., AIP Conf. Proc. No, 120, 280 (1984).Google Scholar
2. Uchida, Y. and Sakai, H., MRS Proc. No.70, 577 (1986).Google Scholar
3. Skumanich, A. and M.Amer, N., Phys. Rev. B 31, 2263 (1985).Google Scholar
4. Xi, J., et al., Proc. International Conf. on Stability of Amorphous Silicon Alloy Materials and Devices, To be Published.Google Scholar
5. Carlson, D.E., et al., AIP Conf. Proc. No. 120, 234 (1984).Google Scholar
6. Morimoto, A., et al., AIP Conf. Proc. No. 120, 221 (1984).Google Scholar
7. Brodsky, M.H., Cardona, M. and Cuomo, J.J., Phys. Rev. B 16, 3556 (1977).Google Scholar
8. Saton, T. and Hiraki, A., Jpn. J. Appl. Phys. 24, L491 (1985).Google Scholar
9. Wagner, H. and Beyer, W., Solid State Commun. 48, 585 (1983).Google Scholar
10. Kuwano, Y. et al., Proc. International Conf. on Stability of Amorphous Silicon Alloy Materials and Devices, To be Published.Google Scholar
11. Ohsawa, H. et al., Jpn. J. Appl. Phys. 24, L838 (1985).Google Scholar
12. Hong, C.S. and Hwang, H.L., Appl. Phys. Lett. 49, 645 (1986).Google Scholar
13. Pankove, J.l., Zanzucchi, P.J., Magee, C.W. and Lucovsky, T., Appl. Phys. Lett. 46, 421 (1985).Google Scholar
14. Deleo, G.G. and Fowler, W.B., Phys. Rev. Lett. 56, 402 (1986).Google Scholar
15. Street, R.A., Phys. Rev. Lett. 49, 1187 (1982).Google Scholar