Skip to main content Accessibility help
×
Home
Hostname: page-component-544b6db54f-dkqnh Total loading time: 0.201 Render date: 2021-10-23T22:04:22.485Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Changes of IR Vibrational Absorption by Light Soaking in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  26 February 2011

Jin Jang
Affiliation:
Dept. of Physics and Research Inst. for Basic Sciences, Kyung Hee University Dongdaemoon-ku, Seoul 131, Korea
Seung Chul Park
Affiliation:
Dept. of Physics and Research Inst. for Basic Sciences, Kyung Hee University Dongdaemoon-ku, Seoul 131, Korea
Chang Geun Lee
Affiliation:
Dept. of Physics and Research Inst. for Basic Sciences, Kyung Hee University Dongdaemoon-ku, Seoul 131, Korea
Sung Chul Kim
Affiliation:
Dept. of Physics and Research Inst. for Basic Sciences, Kyung Hee University Dongdaemoon-ku, Seoul 131, Korea
Choochon Lee
Affiliation:
Dept. of Physics Korea Advanced Inst. of Science and Technology, P.O.Box 150 Chongyangri, Seoul, Korea
Jung Kee Yoon
Affiliation:
Dept. of Physics Korea Advanced Inst. of Science and Technology, P.O.Box 150 Chongyangri, Seoul, Korea
Get access

Abstract

Light-induced changes in vibrational absorption of SiHn have been studied for a-Si:H films. The stretching mode absorption near 2000 cm−1 decreases after light exposure. The magnitude of the change increases as the substrate temperature is lowered, and little change is observed for a-Si:H films deposited above 200°C. From the changes both for the peak and the spectrum, it is suggested that the hydrogen in the bulk diffuses to the microvoids, where it can combine to form H2 in low substrate temperature sample. The B-H modes increase after light soaking, Which is related with the increase in doping efficiency of boron, which is confirmed from the conductivity change with time during illumination.

Type
Research Article
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Jang, J. and Lee, C., AIP Conf. Proc. No, 120, 280 (1984).CrossRefGoogle Scholar
2. Uchida, Y. and Sakai, H., MRS Proc. No.70, 577 (1986).Google Scholar
3. Skumanich, A. and M.Amer, N., Phys. Rev. B 31, 2263 (1985).CrossRefGoogle Scholar
4. Xi, J., et al., Proc. International Conf. on Stability of Amorphous Silicon Alloy Materials and Devices, To be Published.Google Scholar
5. Carlson, D.E., et al., AIP Conf. Proc. No. 120, 234 (1984).Google Scholar
6. Morimoto, A., et al., AIP Conf. Proc. No. 120, 221 (1984).Google Scholar
7. Brodsky, M.H., Cardona, M. and Cuomo, J.J., Phys. Rev. B 16, 3556 (1977).CrossRefGoogle Scholar
8. Saton, T. and Hiraki, A., Jpn. J. Appl. Phys. 24, L491 (1985).Google Scholar
9. Wagner, H. and Beyer, W., Solid State Commun. 48, 585 (1983).CrossRefGoogle Scholar
10. Kuwano, Y. et al., Proc. International Conf. on Stability of Amorphous Silicon Alloy Materials and Devices, To be Published.Google Scholar
11. Ohsawa, H. et al., Jpn. J. Appl. Phys. 24, L838 (1985).CrossRefGoogle Scholar
12. Hong, C.S. and Hwang, H.L., Appl. Phys. Lett. 49, 645 (1986).CrossRefGoogle Scholar
13. Pankove, J.l., Zanzucchi, P.J., Magee, C.W. and Lucovsky, T., Appl. Phys. Lett. 46, 421 (1985).CrossRefGoogle Scholar
14. Deleo, G.G. and Fowler, W.B., Phys. Rev. Lett. 56, 402 (1986).CrossRefGoogle Scholar
15. Street, R.A., Phys. Rev. Lett. 49, 1187 (1982).CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Changes of IR Vibrational Absorption by Light Soaking in Hydrogenated Amorphous Silicon
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Changes of IR Vibrational Absorption by Light Soaking in Hydrogenated Amorphous Silicon
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Changes of IR Vibrational Absorption by Light Soaking in Hydrogenated Amorphous Silicon
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *