Skip to main content Accessibility help
×
Home
Hostname: page-component-55b6f6c457-kv5sj Total loading time: 0.183 Render date: 2021-09-23T19:14:09.573Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Challenges and State-of-the-Art of Oxides on SiC

Published online by Cambridge University Press:  21 March 2011

Lori Lipkin
Affiliation:
Cree Inc. Durham NC 27703, U.S.A.
Mrinal Das
Affiliation:
Cree Inc. Durham NC 27703, U.S.A.
John Palmour
Affiliation:
Cree Inc. Durham NC 27703, U.S.A.
Get access

Abstract

Single crystal SiC is a wide band-gap semiconductor with material characteristics that make it quite suitable for high voltage and high current applications. However, these devices are currently limited by their passivation. Significant improvements have been made with oxides on SiC. The most notable oxide processes are the re-oxidation anneal, a stacked ONO dielectric, and nitridation using an NO or N2O anneal. Additional improvements in lateral MOSFET mobility have been achieved using a surface channel implant, and lower temperature implant activation anneals. However, the passivation remains a significant limitation for SiC power devices.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Nicollian, E. H. and Brews, J.R., MOS (Metal Oxide Semiconductor) Physics and Technology, Wiley Interscience (1982).Google Scholar
2. 17. Lipkin, L.A. and Palmour, J.W., ”Improved Oxidation Procedures for Reduced SiO2/SiC Defects”, J. of Electronic Mat., 25(5), 909915 (1996).CrossRefGoogle Scholar
3. Lipkin, L.A. and Palmour, J.W.Metal-Insulator-SiC Devices with Improved Reliability”, IEEE Trans. on Electron Dev., Vols. 46 p. 525 (1999)CrossRefGoogle Scholar
4. Li, H.F., Dimitrijev, S., Harrison, H.B., Sweatman, D., and Tanner, P.T. “Improving SiO2 Grown on P-Type 4H-SiC by NO Annealing”, Materials Science Forum Vols. 264–268 (1998) pp. 869.CrossRefGoogle Scholar
5. This conference, and Das, M.K., Lipkin, L.A., Palmour, J.W., Chung, G.Y., Williams, J.R., McDonald, K., and Feldman, L.C., ”High Mobility 4H-SiC Inversion Mode MOSFETs Using Thermally Grown, NO Annealed SiO2”, IEEE Device Research Conf., Denver CO, June 2000 Google Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Challenges and State-of-the-Art of Oxides on SiC
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Challenges and State-of-the-Art of Oxides on SiC
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Challenges and State-of-the-Art of Oxides on SiC
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *