Skip to main content Accessibility help
×
Home
Hostname: page-component-8bbf57454-6xp8w Total loading time: 0.265 Render date: 2022-01-23T23:12:03.330Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Catalytic Forming Gas Anneal on III-V/Ge MOS Systems

Published online by Cambridge University Press:  31 January 2011

Wei-E Wang
Affiliation:
weie.wang@intel.com
Han-Chung Lin
Affiliation:
dlin@imec.be, IMEC, Leuven, Belgium
Guy Brammertz
Affiliation:
Guy.Brammertz@imec.be, IMEC, leuven, Belgium
Annelies Delabie
Affiliation:
delabiea@imec.be, IMEC, leuven, Belgium
eddy simoen
Affiliation:
simoen@imec.be, IMEC, leuven, Belgium
Matty Caymax
Affiliation:
Matty.Caymax@imec.be, IMEC, leuven, Belgium
Marc Meuris
Affiliation:
Marc.Meuris@imec.be, IMEC, leuven, Belgium
Marc Heyns
Affiliation:
Heyns@imec.be, IMEC, leuven, Belgium
Get access

Abstract

Catalytic-FGA, a combination of the standard forming gas anneal with a catalytic metal gate, has been applied to study the hydrogen passivation of III-V/Ge MOS systems. Pd (or Pt) metal gate catalytically dissociates molecular hydrogen into atomic hydrogen atoms, which then diffuse through the dielectric layer and neutralize certain semiconductor/dielectric interfacial defects. MOS systems with various interfacial qualities, including lattice-matched (n/p) In0.53Ga0.47As/10nm ALD-Al2O3 (or ZrO2)/Pd capacitors, an undoped Ge/˜1nm GeO2/4nm ALD-Al2O3/Pt capacitor, and an nGe/8nm ALD-Al2O3/Pt capacitor are fabricated to evaluate the effectiveness of C-FGA.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Walle, C.G. Van de and Neugebauer, J., Nature, 423, 626 (2003).10.1038/nature01665CrossRefGoogle Scholar
2 Pearton, S.J., Corbett, J.W., and Shi, T.S., Appl. Phys. A43, 153 (1987).10.1007/BF00615975CrossRefGoogle Scholar
3 Johnson, N.M. and Walle, C.G. Van de, in Hydrogen in Semiconductor II, Semiconductor and Semimetals, vol. 61, edited by Nickel, N.H., Academic Press, N.Y., Ch.2, 1999.Google Scholar
4 Huard, V., Denais, M., and Parthasarathy, C., Microelectronics Reliability, 46, 1 (2006).10.1016/j.microrel.2005.02.001CrossRefGoogle Scholar
5 Pavesi, L., in Properties of Aluminium Gallium Arsenide, edited by Adachi, S., IET, 1993.Google Scholar
6 Chuskey, M. and Haller, E. E., in Hydrogen in Semiconductor II, vol. 61, edited by Nickel, N.H., Academic Press, N.Y. Ch.9, 1999.Google Scholar
7 Pearton, S. J., J. Appl. Phys. 53, 4509 (1982).10.1063/1.331190CrossRefGoogle Scholar
8 Chang, R. P. H. and Coleman, J. J., Appl. Phys. Lett. 32 (5), 332 (1978).10.1063/1.90040CrossRefGoogle Scholar
9 Afanas'ev, V. V., Fedorenko, Y. G., and Stesmans, A., Appl. Phys. Lett. 87, 032107 (2005).10.1063/1.1947372CrossRefGoogle Scholar
10 Weber, J. R., Janotti, A., Rinke, P., and Walle, C. G. Van de, Appl. Phys. Lett. 91, 142101 (2007).10.1063/1.2793184CrossRefGoogle Scholar
11 Matsubara, H., Sasada, T., Takennaka, M., and Tagaki, S., Appl. Phys. Lett. 93, 032104 (2008).10.1063/1.2959731CrossRefGoogle Scholar
12 Bellenger, F., Merckling, C., Penaud, J., Houssa, M., Caymax, M., Meuris, M., Meyer, K. De, and Heyns, M.M., ECS Trans. 16 (5), 411 (2008).10.1149/1.2981622CrossRefGoogle Scholar
13 Seager, C. H., in Hydrogen in Semiconductors, vol. 34, edited by Pankove, J.I. and Johnson, N.M., Academic Press, Ch.2, 1991.10.1016/S0080-8784(08)62857-4CrossRefGoogle Scholar
14 Lundström, I., Sensors and Actuators 1, 403 (1981).10.1016/0250-6874(81)80018-2CrossRefGoogle Scholar
15 Eriksson, M., Salomonsson, A., and Lundström, I., J. Appl. Phys. 98, 034903 (2005).10.1063/1.1994941CrossRefGoogle Scholar
16 Aspnes, D. E. and Heller, A., J. Vac. Sci. Technol. B1 (3), 602 (1983).10.1116/1.582606CrossRefGoogle Scholar
17 Nicollian, E. H. and Brews, J. R., in MOS (Metal Oxide Semiconductor) Physics and Technology, Wiley, New York, 1981.Google Scholar
18 Brammertz, G., Lin, H.-C., Martens, K., Mercier, D., Sioncke, S., Delabie, A., Wang, W.-E, Caymax, M., Meuris, M. and Heyns, M., Appl. Phys. Lett. 93, 183504 (2008).10.1063/1.3005172CrossRefGoogle Scholar
19 Brammertz, G., Lin, H.C., Martens, K., Alian, A., Merckling, C., Penaud, J., Kohen, D., Wang, W.-E, Sioncke, S., Delabie, A., Meuris, M., Caymax, M., Heyns, M., ECS Transactions, 19 (5), 375 (2009).10.1149/1.3119560CrossRefGoogle Scholar
20 Caymax, M., Brammertz, G., Delabie, A., Sioncke, S., Lin, H.-C., Scarozza, M., Pourtois, G., Wang, W.-E, Meuris, M. and Heyns, M., Microelectronic Engineering, 86, 1529 (2009).10.1016/j.mee.2009.03.090CrossRefGoogle Scholar
21 Martens, K., Chui, C. O., Brammertz, G., Jaeger, B. De, Kuzum, D., Meuris, M., Heyns, M. M., Krishnamohan, T., Saraswat, K., Maes, H. E. and Groeseneken, G., IEEE Trans. Elect. Dev. 55 (2), 547 (2008).10.1109/TED.2007.912365CrossRefGoogle Scholar
22 Shur, M., in Physics of Semiconductor Devices, Prentice-Hall Inc., Simon & Schuster Englewood Cliffs, N.J., 1990.Google Scholar
23 Dimoulas, A., Tsipas, P., and Sotiropulos, A., Appl. Phys. Lett. 89, 252110 (2006).10.1063/1.2410241CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Catalytic Forming Gas Anneal on III-V/Ge MOS Systems
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Catalytic Forming Gas Anneal on III-V/Ge MOS Systems
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Catalytic Forming Gas Anneal on III-V/Ge MOS Systems
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *