Skip to main content Accessibility help
×
Home
Hostname: page-component-564cf476b6-qxxll Total loading time: 0.165 Render date: 2021-06-19T04:36:50.081Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true }

Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in Mocvd-Grown InGaN Epilayers and InGaN/GaN Quantum Wells

Published online by Cambridge University Press:  10 February 2011

Yong-Hoon Cho
Affiliation:
Center for Laser and Photonics Research and Department of Physics Oklahoma State University, Stillwater, OK 74078
B. D. Little
Affiliation:
Center for Laser and Photonics Research and Department of Physics Oklahoma State University, Stillwater, OK 74078
G. H. Gainer
Affiliation:
Center for Laser and Photonics Research and Department of Physics Oklahoma State University, Stillwater, OK 74078
J. J. Song
Affiliation:
Center for Laser and Photonics Research and Department of Physics Oklahoma State University, Stillwater, OK 74078
S. Keller
Affiliation:
Electrical and Computer Engineering and Materials Departments University of California, Santa Barbara, CA 93106
U. K. Mishra
Affiliation:
Electrical and Computer Engineering and Materials Departments University of California, Santa Barbara, CA 93106
S. P. DenBaars
Affiliation:
Electrical and Computer Engineering and Materials Departments University of California, Santa Barbara, CA 93106
Get access

Abstract

Temperature-dependent photoluminescence (PL) studies have been performed on InGaN epilayers and InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition. We observed anomalous temperature dependent emission behavior (specifically an S-shaped decrease-increase-decrease) of the peak energy (EpL) of the InGaN-related PL emission with increasing temperature. In the case of the InGaN epilayer, EPL decreases in the temperature range of 10 - 50 K, increases for 50 - 110 K, and decreases again for 110 - 300 K with increasing temperature. For the InGaN/GaN MQWs, EPL decreases from 10 - 70 K, increases from 70 - 150 K, then decreases again for 150 - 300 K. The actual temperature dependence of the PL emission was estimated with respect to the bandgap energy determined by photoreflectance spectra. We observed that the PL peak emission shift has an excellent correlation with a change in carrier lifetime with temperature. We demonstrate that the temperature-induced S-shaped PL shift is caused by the change in carrier recombination dynamics with increasing temperature due to inhomogeneities in the InGaN structures.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Takeuchi, T., Sota, S., Katsuragawa, M., Komori, M., Takeuchi, H., Amano, H., and Akasaki, I., Jpn. J. Appl. Phys., Part 2 36, L382 (1997).CrossRefGoogle Scholar
2. Im, J. S., Kollmer, H., Off, J., Sohmer, A., Scholz, F., and Hangleiter, A., Phys. Rev. B 57, R9435 (1998); A. Hangleiter, J. S. Im, H. Kollmer, S. Heppel, J. Off, and F. Scholz, MRS Internet J. Nitride Semicond. Res. 3, 15 (1998).Google Scholar
3. Jeon, E. S., Kozlov, V., Song, Y.-K., Vertikov, A., Kuball, M., Nurmikko, A. V., Liu, H., Chen, C., Kern, R. S., Kuo, C. P., and Craford, M. G., Appl. Phys. Lett. 69, 4194 (1996).CrossRefGoogle Scholar
4. Chichibu, S., Azuhata, T., Sota, T., and Nakamura, S., Appl. Phys. Lett. 69, 4188 (1996).CrossRefGoogle Scholar
5. Perlin, P., Iota, V., Weinstein, B. A., Wisniewski, P., Suski, T., Eliseev, P. G., and Osinski, M., Appl. Phys. Lett. 70, 2993 (1997).CrossRefGoogle Scholar
6. Cho, Y. H., Gainer, G. H., Fischer, A. J., Song, J. J., Keller, S., Mishra, U. K., and DenBaars, S. P., Appl. Phys. Lett. 73, 1370 (1998).CrossRefGoogle Scholar
7. Cho, Y. H., Song, J. J., Keller, S., Minsky, M. S., Hu, E., Mishra, U. K., and DenBaars, S. P., Appl. Phys. Lett. 73, 1128 (1998); Y. H. Cho, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars, ibid. 73, 3181 (1998).CrossRefGoogle Scholar
8. Lefebvre, P., Allegre, J., Gil, B., Kavokine, A., Mathieu, H., Kim, W., Salvador, A., Botchkarev, A., and Morkoc, H., Phys. Rev. B 57, R9447 (1998).CrossRefGoogle Scholar
9. Narukawa, Y., Kawakami, Y., Funato, M., Fujita, Sz., Fujita, Sg., and Nakamura, S., Appl. Phys. Lett. 70, 981 (1997); Y. Narukawa, Y. Kawakami, Sz. Fujita, Sg. Fujita, and S. Nakamura, Phys. Rev. B 55, R1938 (1997).CrossRefGoogle Scholar
10. Eliseev, P. G., Perlin, P., Lee, J., and Osinski, M., Appl. Phys. Lett. 71, 569 (1997).CrossRefGoogle Scholar
11. Zolina, K. G., Kudryashov, V. E., Turkin, A. N., and Yunovich, A. E., MRS Internet J. Nitride Semicond. Res. 1, Art, 11 (1996).CrossRefGoogle Scholar
12. Keller, S., Abare, A. C., Minsky, M. S., Wu, X. H., Mack, M. P., Speck, J. S., Hu, E., Coldren, L. A., Mishra, U. K., and DenBaars, S. P., Materials Science Forum 264–268, 1157 (1998).CrossRefGoogle Scholar
13. Bidnyk, S., Schmidt, T. J., Cho, Y. H., Gainer, G. H., Song, J. J., Keller, S., Mishra, U. K., and DenBaars, S. P., Appl. Phys. Lett. 72, 1623 (1998).CrossRefGoogle Scholar
14. Schmidt, T. J., Cho, Y. H., Gainer, G. H., Song, J. J., Keller, S., Mishra, U. K., and DenBaars, S. P., Appl. Phys. Lett. 73, 560 (1998); ibid. 73, 1892 (1998).CrossRefGoogle Scholar
15. Cho, Y. H., Fedler, F., Hauenstein, R. J., Park, G. H., Song, J. J., Keller, S., Mishra, U. K., and DenBaars, S. P., J. Appl. Phys. (to be published).Google Scholar
16. Varshni, Y. P., Physica 34, 149 (1967).CrossRefGoogle Scholar
17. Shan, W., Schmidt, T. J., Yang, X. H., Hwang, S. J., Song, J. J., and Goldenberg, B., Appl. Phys. Lett. 66, 985 (1995); W. Shan, B. D. Little, J. J. Song, Z. C. Feng, M. Schurman, and R. A. Stall, ibid. 69, 3315 (1996).CrossRefGoogle Scholar
18. Ridley, B. K., Phys. Rev. B 41, 12 190 (1990).Google Scholar
19. Feldmann, J., Peter, G., Gobel, E. O., Dawson, P., Moore, K., Foxon, C., and Elliott, R. J., Phys. Rev. Lett. 59, 2337 (1987).CrossRefGoogle Scholar
20. Harris, C. I., Monemar, B., Amano, H., and Akasaki, I., Appl. Phys. Lett. 67, 840 (1995).CrossRefGoogle Scholar
21. Sun, C. K., Keller, S., Wang, G., Minsky, M. S., Bowers, J. E., and DenBaars, S. P., Appl. Phys. Lett. 69, 1936 (1996).CrossRefGoogle Scholar
22. Im, J. S., Harle, V., Scholz, F., and Hangleiter, A., MRS Internet J. Nitride Semicond. Res. 1, 37 (1996).Google Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in Mocvd-Grown InGaN Epilayers and InGaN/GaN Quantum Wells
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in Mocvd-Grown InGaN Epilayers and InGaN/GaN Quantum Wells
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in Mocvd-Grown InGaN Epilayers and InGaN/GaN Quantum Wells
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *