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Carbon-Related Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures

Published online by Cambridge University Press:  06 February 2014

Yoshitaka Nakano
Affiliation:
Chubu University, 1200 Matsumoto, Kasugai, Aichi 487-8501, Japan
Yoshihiro Irokawa
Affiliation:
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Masatomo Sumiya
Affiliation:
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Yasunobu Sumida
Affiliation:
POWDEC, 1-23-15 Wakagi, Oyama, Tochigi 323-0028, Japan
Shuichi Yagi
Affiliation:
POWDEC, 1-23-15 Wakagi, Oyama, Tochigi 323-0028, Japan
Hiroji Kawai
Affiliation:
POWDEC, 1-23-15 Wakagi, Oyama, Tochigi 323-0028, Japan
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Abstract

We have investigated on a relation between C-related deep-level defects and turn-on recovery characteristics in bulk regions of AlGaN/GaN hetero-structures containing various C concentrations, employing their Schottky barrier diodes. With decreasing the growth temperature of the GaN buffer layer, three specific deep-level defects located at ∼2.07, ∼2.75, and ∼3.23 eV below the conduction band were significantly enhanced probably due to the C impurity incorporation into the GaN buffer layer. Among them, the ∼2.75 and ∼3.23 eV levels are considered to be strongly responsible for the two-dimensional electron gas (2DEG) carrier trapping in the bulk regions of the hetero-structures, from their turn-on current recovery characteristics under various optical illuminations.

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Copyright
Copyright © Materials Research Society 2014 

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References

Bradley, S. T., Young, A. P., Brillson, L. J., Murthy, M. J., Schaff, W. J., and Eastman, L. F., IEEE Trans. Electron Devices 48, 412 (2001).CrossRef
Nakano, Y., Irokawa, Y., Sumida, Y., Yagi, S., and Kawai, H., J. Appl. Phys. 112, 106103 (2012).CrossRef
Niebuhr, R., Bachem, K., Bombrowski, K., Maier, M., Plerschen, W., and Kaufmann, U., U., J. Electron. Mater. 24, 1531 (1995).CrossRef
Armstrong, A., Arehart, A. R., Moran, B., DenBaars, S. P., Mishra, U. K., Speck, J. S., Ringel, S. A., Appl. Phys. Lett. 84, 374 (2004).CrossRef
Nakano, Y., Irokawa, Y., and Takeguchi, M., Appl. Phys. Express 1, 091101 (2008).CrossRef
Son, N. T., Hemmingsson, C. G., Paskova, T., Evans, K. R., Usui, A., Morishita, N., Ohshima, T., Isoya, J., Monemar, B., Janzen, E., Phys. Rev. B 80, 153202 (2009).CrossRef
Seager, C. H., Wright, A. F., Yu, J., and Götz, W., J. Appl. Phys. 92, 6553 (2002).CrossRef
Klein, P. B., Binari, S. C., Ikossi, K., Wickenden, A. E., Koleske, D. D., and Henry, R. L., Appl. Phys. Lett. 79, 3527 (2001).CrossRef

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Carbon-Related Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures
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