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The Carbon Co-implant with Spike RTA Solution for Boron Extension

Published online by Cambridge University Press:  01 February 2011

Bartek Pawlak
Affiliation:
bartek.pawlak@philips.com, Philips Research Europe, Front-End CMOS, Kapeldreef 75, Leuven, N/A, B-3001, Belgium, 32-16-281060, 32-16-281706
Emmanuel Augendre
Affiliation:
augendre@imec.be, IMEC, Leuven, N/A, B-3001, Belgium
Simone Severi
Affiliation:
severis@imec.be, IMEC, Leuven, N/A, B-3001, Belgium
Pierre Eyben
Affiliation:
eyben@imec.be, IMEC, Leuven, N/A, B-3001, Belgium
Tom Janssens
Affiliation:
tom.janssens@imec.be, IMEC, Leuven, N/A, B-3001, Belgium
Annelies Falepin
Affiliation:
annelies.falepin@imec.be, IMEC, Leuven, N/A, B-3001, Belgium
Philippe Absil
Affiliation:
absilp@imec.be, IMEC, Leuven, N/A, B-3001, Belgium
Wilfried Vandervorst
Affiliation:
vdvorst@imec.be, IMEC, Leuven, N/A, B-3001, Belgium
Susan Felch
Affiliation:
Susan_Felch@amat.com, AMAT, Sunnyvale, CA 94085, United States
Erik Collart
Affiliation:
Erik_Collart@amat.com, AMAT, Horsham, N/A, RH13 5PX, United Kingdom
Robert Schreutelkamp
Affiliation:
Robert_Schreutelkamp@amat.com, AMAT, Leuven, N/A, B-3001, Belgium
Nick Cowern
Affiliation:
Nick.Cowern@surrey.ac.uk, University of Surrey, Surrey, N/A, GU2 7XH, United Kingdom
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Abstract

We present B junction extensions that are extremely abrupt and shallow manufactured by amorphization, C co-implantation and conventional rapid thermal annealing (RTA). Resulting junctions have abruptnesses of 2 nm/dec better than as-implanted profiles. The most shallow B junction that has been manufactured is 15 nm deep and Rs = 626 Ω/sq. Successful implementation of these junctions is straightforward for P-MOS 30 nm gate length devices.

Keywords

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

[1] Cowern, N. E. B., Mannino, G., Stolk, P. A., Roozeboom, F., Huizing, H. G. A., Berkum, J. G. M. van, Cristiano, F., Claverie, A., and Jaraíz, M., Phys. Rev. Lett. 82, 4460 (1999).CrossRefGoogle Scholar
[2] Moroz, Victor, Oh, Yong-Seog, Pramanik, Dipu, Graoui, Houda, and Foad, Majeed A., Appl. Phys. Lett. 87, 051908 (2005).CrossRefGoogle Scholar
[3] Pawlak, B. J., Janssens, T., Brijs, B., Vandervorst, W., Felch, S.B., Collart, E.J.H., Cowern, N. E. B., submitted to Appl. Phys. Lett.Google Scholar

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