Hostname: page-component-788cddb947-pt5lt Total loading time: 0 Render date: 2024-10-11T01:55:33.918Z Has data issue: false hasContentIssue false
  • English
  • Français

The Carbon Co-implant with Spike RTA Solution for Boron Extension

Published online by Cambridge University Press:  01 February 2011

Bartek Pawlak ,
Emmanuel Augendre ,
Simone Severi ,
Pierre Eyben ,
Tom Janssens ,
Annelies Falepin ,
Philippe Absil ,
Wilfried Vandervorst ,
Susan Felch  and
Erik Collart
...Show all authors
Bartek Pawlak
Affiliation:
bartek.pawlak@philips.com, Philips Research Europe, Front-End CMOS, Kapeldreef 75, Leuven, N/A, B-3001, Belgium, 32-16-281060, 32-16-281706
Emmanuel Augendre
Affiliation:
augendre@imec.be, IMEC, Leuven, N/A, B-3001, Belgium
Simone Severi
Affiliation:
severis@imec.be, IMEC, Leuven, N/A, B-3001, Belgium
Pierre Eyben
Affiliation:
eyben@imec.be, IMEC, Leuven, N/A, B-3001, Belgium
Tom Janssens
Affiliation:
tom.janssens@imec.be, IMEC, Leuven, N/A, B-3001, Belgium
Annelies Falepin
Affiliation:
annelies.falepin@imec.be, IMEC, Leuven, N/A, B-3001, Belgium
Philippe Absil
Affiliation:
absilp@imec.be, IMEC, Leuven, N/A, B-3001, Belgium
Wilfried Vandervorst
Affiliation:
vdvorst@imec.be, IMEC, Leuven, N/A, B-3001, Belgium
Susan Felch
Affiliation:
Susan_Felch@amat.com, AMAT, Sunnyvale, CA 94085, United States
Erik Collart
Affiliation:
Erik_Collart@amat.com, AMAT, Horsham, N/A, RH13 5PX, United Kingdom
Robert Schreutelkamp
Affiliation:
Robert_Schreutelkamp@amat.com, AMAT, Leuven, N/A, B-3001, Belgium
Nick Cowern
Affiliation:
Nick.Cowern@surrey.ac.uk, University of Surrey, Surrey, N/A, GU2 7XH, United Kingdom
Get access

Abstract

We present B junction extensions that are extremely abrupt and shallow manufactured by amorphization, C co-implantation and conventional rapid thermal annealing (RTA). Resulting junctions have abruptnesses of 2 nm/dec better than as-implanted profiles. The most shallow B junction that has been manufactured is 15 nm deep and Rs = 626 Ω/sq. Successful implementation of these junctions is straightforward for P-MOS 30 nm gate length devices.

Keywords

BCdevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 912: Symposium C – Doping Engineering for Device Fabrication , 2006 , 0912-C01-03
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Cowern, N. E. B., Mannino, G., Stolk, P. A., Roozeboom, F., Huizing, H. G. A., Berkum, J. G. M. van, Cristiano, F., Claverie, A., and Jaraíz, M., Phys. Rev. Lett. 82, 4460 (1999).Google Scholar
[2] Moroz, Victor, Oh, Yong-Seog, Pramanik, Dipu, Graoui, Houda, and Foad, Majeed A., Appl. Phys. Lett. 87, 051908 (2005).Google Scholar
[3] Pawlak, B. J., Janssens, T., Brijs, B., Vandervorst, W., Felch, S.B., Collart, E.J.H., Cowern, N. E. B., submitted to Appl. Phys. Lett.Google Scholar