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Capacitance-Voltage Characterization of Solar Cells With CdS in CdTe Matrix

Published online by Cambridge University Press:  01 February 2011

Rashmi Jha
Affiliation:
rashmi.jha@utoledo.edu, University of Toledo, EECS, Toledo, Ohio, United States
Xiangxin Liu
Affiliation:
liuxiangxin@gmail.com, University of Toledo, Physics and Astronomy, Toledo, Ohio, United States
Kristopher Wieland
Affiliation:
kristopher.Wieland@utoledo.edu, University of Toledo, Physics and Astronomy, Toledo, Ohio, United States
Jorhan Ordosgoitti
Affiliation:
jorhan.ordosgoitti@utoledo.edu, University of Toledo, EECS, Toledo, Ohio, United States
Naba Paudel
Affiliation:
naba.paudel@utoledo.edu, University of Toledo, Physics and Astronomy, Toledo, Ohio, United States
Kai Sun
Affiliation:
kai.sun@umich.edu, University of Michigan, Electron Microbeam Analysis Laboratory, Ann Arbor, Michigan, United States
Alvin Compaan
Affiliation:
alvin.compaan@utoledo.edu, University of Toledo, Physics and Astronomy, Toledo, Ohio, United States
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Abstract

Solar cells fabricated from a sputtering target with 5% cadmium sulfide (CdS) intermixed cadmium telluride (CdTe) material was studied using Capacitance-Voltage (CV) profiling. The average efficiency of a set of these novel solar cells under one sun illumination was observed to be 7.56%. In contrast with standard sputtered CdS/CdTe cells, the junction capacitance of the mixed compound device was observed to show minimal change in the entire reverse bias range. The element mapping of the film using Bright Field Scanning Transmission Electron Microscopy (BF-STEM) was used to determine the distribution of S, Te, Cd, O, and Cl in CdTe film. From these observations, it is believed that the morphology and composition of the film resulted in a built-in potential which was sufficient to completely deplete the film.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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References

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