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Bi1-xSbx Alloy Thin Film and Superlattice Thermoelectrics

Published online by Cambridge University Press:  10 February 2011

S. Cho
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208
I. Vurgaftman
Affiliation:
Code 5613, Naval Research Laboratory, Washington, D.C. 20375-5338
A. B. Shick
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208
A. DiVenere
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208
Y. Kim
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208
S. J. Youn
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208
C. A. Hoffman
Affiliation:
Code 5613, Naval Research Laboratory, Washington, D.C. 20375-5338
G. K. L. Wong
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208
A. J. Freeman
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208
J. R. Meyer
Affiliation:
Code 5613, Naval Research Laboratory, Washington, D.C. 20375-5338
J. B. Ketterson
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208
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Abstract

We have grown Bi1-xSbx alloy thin films on CdTe(111)B over a wide range of Sb concentrations (0≤x≤0.183) using MBE. We have observed several differences with the bulk system. The 3.5 and 5.1% Sb alloys show semiconducting behavior, and the Sb concentration with the maximum bandgap is shifted to a lower Sb concentration, from 15% in bulk to 9%. The power factor S2/ρ (where S is thermoelectric power(TEP) and ρ electrical resistivity) peaks at a significantly higher temperature (250K) than previously reported for the bulk alloy (80K). The magnetotransport properties of Bi1-x,Sbx thin films (x = 0, 0.09, and 0.16) and Bi/CdTe superlattices have been determined by applying the Quantitative Mobility Spectrum Analysis (QMSA) and multicarrier fitting to the magneticfield- dependent resistivities and Hall coefficients, using algorithms which account for the strong anisotropy of the mobilities. The calculated S values are in good agreement with experimental results. The structural stability of bulk Bi is studied using the local density linear muffin-tin orbital method. It is shown that the internal displacement changes the Bi electronic structure from a metal to a semimetal, in qualitative agreement with a Jones-Peierls-type transition. The total energy is calculated to have a double well dependence on the internal displacement, and to provide a stabilization of the trigonal phase. We show that an increase of the trigonal shear angle leads to a semimetal-semiconductor transition in Bi.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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