Skip to main content Accessibility help
×
Home
Hostname: page-component-568f69f84b-l2zqg Total loading time: 0.424 Render date: 2021-09-17T08:17:22.974Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

A Beem Study of PtSi Schottky Contacts on Ion-Milled Si

Published online by Cambridge University Press:  10 February 2011

Guo-Ping Ru
Affiliation:
Department of Electronic Engineering, Fudan University, Shanghai 200433, China
C. Detavernier
Affiliation:
Department of Solid State Science, University of Gent, B-9000 Gent, Belgium
R. A. Donaton
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
A. Blondeel
Affiliation:
Department of Solid State Science, University of Gent, B-9000 Gent, Belgium
P. Clauws
Affiliation:
Department of Solid State Science, University of Gent, B-9000 Gent, Belgium
R. L. Van Meirhaeghe
Affiliation:
Department of Solid State Science, University of Gent, B-9000 Gent, Belgium
F. Cardon
Affiliation:
Department of Solid State Science, University of Gent, B-9000 Gent, Belgium
K. Maex
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium Also at INSYS, K U. Leuven, B-3001 Leuven, Belgium
Xin-Ping Qu
Affiliation:
Department of Electronic Engineering, Fudan University, Shanghai 200433, China
Shi-Yang Zhu
Affiliation:
Department of Electronic Engineering, Fudan University, Shanghai 200433, China
Bing-Zong Li
Affiliation:
Department of Electronic Engineering, Fudan University, Shanghai 200433, China
Get access

Abstract

Ballistic electron emission microscopy (BEEM) and deep level transient spectroscopy (DLTS) have been used to study the effects of substrate damage introduced by an ion-milling process in PtSi/n-Si Schottky contacts. Argon ions with well-defined energies of 300, 500, 700, 1000, 1500 eV were used to sputter n-type Si substrates in an ion beam sputtering system before metal deposition and silicide formation. Histograms of the PtSi/n-Si Schottky barrier height (SBH) measured by BEEM show that the mean SBH decreases with increasing ion energy, which can be explained as a result of donor-like defects that are introduced by the ion milling treatment. From DLTS measurements, we found direct evidence for the presence of such defects.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] See for example, Mogab, C. J., Dry Etching, in VLSI Technology, ed. Sze, S. M. (McGraw-ill, 1983, Auckland).Google Scholar
[2] Fonash, S. J., J. Electrochem. Soc. 66 3885 (1990).CrossRefGoogle Scholar
[3] Ashok, S., Chow, T. P. and Baliga, B. J., Appl. Phys. Lett. 42, 687 (1983).10.1063/1.94073CrossRefGoogle Scholar
[4] F, Moghadam, K. and Mu, X. C., IEEE Trans. Electron Devices ED–36, 1602 (1989).10.1109/16.34219CrossRefGoogle Scholar
[5] Grusell, E., Berg, S. and Andersson, L. P., J. Electrochem. Soc. 127, 1573 (1980).CrossRefGoogle Scholar
[6] Deenapanray, P. N. K., Auret, F. D. and Myburg, G., J Vac. Sci. Technol. B, 16 (1873).Google Scholar
[7] Tung, R. T., Phys. Rev. B, 45 13509(1992).10.1103/PhysRevB.45.13509CrossRefGoogle Scholar
[8] Kaiser, W. J. and Bell, L. D., Phys. Rev. Lett. 66 1406 (1988).10.1103/PhysRevLett.60.1406CrossRefGoogle Scholar
[9] Bell, L. D. and Kaiser, W. J., Phys. Rev. Lett. 66 2368 (1988).10.1103/PhysRevLett.61.2368CrossRefGoogle Scholar
[10] Couillard, J. G., Davies, A. and Craighead, H. G., .J. Vac. Sci. Technol. B1O, 3112 (1992).10.1116/1.585939CrossRefGoogle Scholar
[11] Quattropani, L., Solt, K., Niedermann, P., -Aprile, I. M., Fischer, O. and Pavelka, T., Appl. Surf Sci. 70/71, 391 (1993).10.1016/0169-4332(93)90463-LCrossRefGoogle Scholar
[12] Donaton, R. A., Jin, S., Bender, H., Zagrebnov, M., Baert, K., Maex, K., Vantomme, A., Langouche, G., Microelectron. Eng. 37/38, 507 (1997).CrossRefGoogle Scholar
[13] Sze, S. M., Physics of Semiconductor Devices (Wiley, 1981).Google Scholar
[14] Shannon, J. M., Appl. Phys. Lett. 24, 369 (1974).CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

A Beem Study of PtSi Schottky Contacts on Ion-Milled Si
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

A Beem Study of PtSi Schottky Contacts on Ion-Milled Si
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

A Beem Study of PtSi Schottky Contacts on Ion-Milled Si
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *