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Barium bis(β-Diketonate)•tetraglyme Complexes as Potential CVD Precursors for Electronic Materials

Published online by Cambridge University Press:  10 February 2011

Henry A. Luten III.
Affiliation:
School of Chemistry and Biochemistry, School of Materials Science and Engineering, and Molecular Design Institute, Georgia Institute of Technology, Atlanta, Georgia 30332–0400, USA.
David J. Otway
Affiliation:
School of Chemistry and Biochemistry, School of Materials Science and Engineering, and Molecular Design Institute, Georgia Institute of Technology, Atlanta, Georgia 30332–0400, USA.
William S. Rees Jr.
Affiliation:
School of Chemistry and Biochemistry, School of Materials Science and Engineering, and Molecular Design Institute, Georgia Institute of Technology, Atlanta, Georgia 30332–0400, USA.
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Abstract

MOCVD, one preferred technique of the present electronics industry, has not yet emerged as the thin film method of choice for group 2 element containing materials due to the demonstrable shortcomings of the available source compounds. Most specifically, the challenge presented by the group 2 element charge/ionic radius ratio must be overcome to meet the vapor pressure requirements for CVD. To date, development of group 2 precursors suitable for MOCVD has focused mainly on the use of substituted acetylacetonate (acac) complexes. Earlier, several series of somewhat volatile precursors were developed by the use of acetylacetonate complexes containing fluorinated sidegroups. These precursors, while elegantly designed for the thermal deposition of BaF2, are not ideal for the preparation of oxide thin films. This arises from their propensity to initially form MF2, which must be reacted further in situ, or in a post-deposition treatment to yield the ultimately sought metal oxide. It is of interest, therefore, to develop stable, volatile precursors lacking fluorinated ligands.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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Barium bis(β-Diketonate)•tetraglyme Complexes as Potential CVD Precursors for Electronic Materials
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