Hostname: page-component-848d4c4894-sjtt6 Total loading time: 0 Render date: 2024-06-14T08:09:22.283Z Has data issue: false hasContentIssue false

Atomic Vapour Deposition (AVD™) Process for High Performance HfO22 Dielectric Layers

Published online by Cambridge University Press:  28 July 2011

V. Cosnier
Affiliation:
STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles cedex, France
K. Dabertrand
Affiliation:
STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles cedex, France
S. Blonkowski
Affiliation:
STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles cedex, France
S. Lhostis
Affiliation:
STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles cedex, France
S. Zoll
Affiliation:
STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles cedex, France
Y. Morand
Affiliation:
STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles cedex, France
S. Descombes
Affiliation:
STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles cedex, France
B. Guillaumot
Affiliation:
STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles cedex, France
C. Hobbs
Affiliation:
Motorola Crolles2 Alliance, 850 rue Jean Monnet, 38926 Crolles cedex, France
N. Rochat
Affiliation:
CEA Grenoble, DRT/D2NT-LETI, 17 rue des Martyrs, 38054 Grenoble, France
G. Rolland
Affiliation:
CEA Grenoble, DRT/D2NT-LETI, 17 rue des Martyrs, 38054 Grenoble, France
O. Renault
Affiliation:
CEA Grenoble, DRT/D2NT-LETI, 17 rue des Martyrs, 38054 Grenoble, France
X. Garros
Affiliation:
CEA Grenoble, DRT/D2NT-LETI, 17 rue des Martyrs, 38054 Grenoble, France
M. Cassé
Affiliation:
CEA Grenoble, DRT/D2NT-LETI, 17 rue des Martyrs, 38054 Grenoble, France
J. Mitard
Affiliation:
CEA Grenoble, DRT/D2NT-LETI, 17 rue des Martyrs, 38054 Grenoble, France
P. Lehnen
Affiliation:
AIXTRON AG Kackertstr. 15-17, 52072, Aachen,Germanycontact: Vincent.cosnier@st.com
S. Miedl
Affiliation:
AIXTRON AG Kackertstr. 15-17, 52072, Aachen,Germanycontact: Vincent.cosnier@st.com
J. Lindner
Affiliation:
AIXTRON AG Kackertstr. 15-17, 52072, Aachen,Germanycontact: Vincent.cosnier@st.com
M. Schumacher
Affiliation:
AIXTRON AG Kackertstr. 15-17, 52072, Aachen,Germanycontact: Vincent.cosnier@st.com
Get access

Abstract

Hf-family compounds have been widely studied as high k gate dielectric materials, they can be elaborated in a wide range of deposition techniques but ALD and MOCVD are the most advanced. In this contribution, the deposition of pure HfO2 is performed by Atomic Vapour Deposition, which is a sort of pulsed-mode MOCVD. The precursor, diluted into a solvent, is pulsed through specific injectors (TriJet®), micro-droplets are vaporised and distributed to the substrate through a showerhead. ATR-FTIR and Hg-probe measurements have been extensively used to evaluate the materials. The advantage of this specific MOCVD system is that it allows working within a wide range of liquid injection frequencies. Thus, we have been able to show that the frequency of injection has a huge impact on the structural and electrical properties of the material. It has been evidence that working at low frequencies is crucial in order to get good electrical behaviour. Higher temperature deposition shows also a clear benefit. An EOT of 1.15 nm with 6.10−2 A/cm2 at |Vfb| + 1 V, that is to say about 3 orders of magnitude below what is obtained with SiO2 has been obtained on capacitors with TiN gate. This is a very good achievement fore pure HfO2 deposited by MOCVD.

This work has been made in the frame of MEDEA + T207 European project with the help of Air Liquide and Epichem.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Rochat, N., et al. , Material Science and Engineering-B-Solid States Materials for Advanced Technology B102(1-3):1621, (2003)Google Scholar
2. Garros, X., et al. , Electrochemical and Solid States Letters 5(3):F46, (2002)Google Scholar
3. Takahashi, K., et al. , Applied Surface Science 216(1-4):296301, (2003)Google Scholar
4. Van-Elshocht, S. et al. , Novel Material and Processes for Advanced CMOS-Mater. Res. Soc. Symposium Proceedings 745:197202, (2003)Google Scholar
5. Lime, F., et al. , Solid State Electronics 47:16171621, (2003)Google Scholar
6. Gusev, E.P. et al. , International Electron Device Meeting. Technical Digest Cat N° 01CH27224:20.1.14, (2001)Google Scholar
7. Rochat, N., et al. , Phys. Stat. Sol. (c)(1-5), (2003)Google Scholar
8. Muller, M. et al. , ESSDERC 2003 proceedings Cat N° 03EX704: 367370, (2003)Google Scholar
9. Guillaumot, B. et al. , IEDM 2002 Tech. Dig.: 355358, (2002)Google Scholar