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Asymmetric Hybrid Al(Ga)SbAs/InAs/Cd(Mg)Se Heterostructures for Mid-IR LEDS and Lasers

Published online by Cambridge University Press:  21 March 2011

S. V. Ivanov
Affiliation:
Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia
V. A. Kaygorodov
Affiliation:
Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia
V. A. Solov'ev
Affiliation:
Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia
E. V. Ivanov
Affiliation:
Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia
K. D. Moiseev
Affiliation:
Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia
S. V. Sorokin
Affiliation:
Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia
B. Ya. Meltzer
Affiliation:
Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia
A. N. Semenov
Affiliation:
Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia
M. P. Mikhailova
Affiliation:
Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia
Yu. P. Yakovlev
Affiliation:
Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia
P. S. Kop'ev
Affiliation:
Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia
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Abstract

A hybrid double heterostructure with large asymmetric band offsets, combining AlAsSb/InAs (as a III–V part) and CdMgSe/CdSe (as a II–VI part), has been proposed as a basic element of a mid-infrared laser structure design. The p-i-n diode structure has been successfully grown by molecular beam epitaxy (MBE) and exhibited an intense long-wavelength electroluminescence at 3.12 μm (300K). A II–VI MBE growth initiation with a thin ZnTe buffer layer prior to the CdMgSe deposition results in a dramatic reduction of defect density originating at the II–VI/III–V interface, as demonstrated by transmission electron microscopy. A less than 10 times reduction of electroluminescence intensity from 77 to 300K indicates an efficient carrier confinement in the InAs active layer due to high potential barriers in conduction and valence bands, estimated as ΔEC = 1.28 eV and ΔEV ∼ 1.6 eV. An increase in the pumping current results in a super-linear raising the EL intensity. The type of band line up at the coherent InAs/Cd1−xMgxSe interface is discussed for 0≤x≤0.2, using experimental data and theoretical estimations within a model-solid theory.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

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Asymmetric Hybrid Al(Ga)SbAs/InAs/Cd(Mg)Se Heterostructures for Mid-IR LEDS and Lasers
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