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a-Si:H/a-SiC:H Heterostructure for Bias-Controlled Photodetectors

Published online by Cambridge University Press:  16 February 2011

G. De Cesare
Affiliation:
Dipartimento di Ingegneria Elettronica, Università di Roma “La Sapienza”, Via Eudossiana 18,00184 Roma, ITALY.
F. Irrera
Affiliation:
Dipartimento di Ingegneria Elettronica, Università di Roma “La Sapienza”, Via Eudossiana 18,00184 Roma, ITALY.
F. Lemmi
Affiliation:
Dipartimento di Ingegneria Elettronica, Università di Roma “La Sapienza”, Via Eudossiana 18,00184 Roma, ITALY.
F. Palma
Affiliation:
Dipartimento di Ingegneria Elettronica, Università di Roma “La Sapienza”, Via Eudossiana 18,00184 Roma, ITALY.
M. Tucci
Affiliation:
Dipartimento di Ingegneria Elettronica, Università di Roma “La Sapienza”, Via Eudossiana 18,00184 Roma, ITALY.
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Abstract

We present a novel family of photodetectors based on hydrogenated amorphous Si/SiC p-i-n-i-p heterostructures. Front p-i-n and rear n-i-p diodes work one as a detector and the other as a load impedance, depending on the polarity of the applied voltage. Due to different absorption at different wavelengths, the devices operate as bias-controlled light detectors in either the blue or the red regions. The energy gap and the thickness of the two intrinsic layers have been optimized to obtain a sharp wavelength selection (centered at 430 and 630 nm) with high rejection-ratios and good quantum efficiencies. The I-V characteristics and the device time response are investigated and simulated by SPICE.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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a-Si:H/a-SiC:H Heterostructure for Bias-Controlled Photodetectors
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