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Artificial Formation of Nucleation Seed in Excimer Laser Recrystallization Of Poly-Si

Published online by Cambridge University Press:  10 February 2011

Jae-Hong Jeon
Affiliation:
School of Electrical Engineering, Seoul National Univ., Seoul, 151-742, KOREA
Kee-Chan Park
Affiliation:
School of Electrical Engineering, Seoul National Univ., Seoul, 151-742, KOREA
Ji-Hoon Kang
Affiliation:
School of Electrical Engineering, Seoul National Univ., Seoul, 151-742, KOREA
Min-Cheol Lee
Affiliation:
School of Electrical Engineering, Seoul National Univ., Seoul, 151-742, KOREA
Min-Koo Han
Affiliation:
School of Electrical Engineering, Seoul National Univ., Seoul, 151-742, KOREA
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Abstract

ABSTARCT

Excimer laser annealing method employing artificial nucleation seed is proposed to increase the grain size of polycrystalline silicon(poly-Si). We utilize Si component incorporated in aluminum(Al)-sputtering source for the nucleation seed. Si clusters which are to be used as nucleation seed are successfully formed on the substrate by deposition and etch-back of Si-incorporated Al layer. Irradiation of excimer laser on amorphous silicon(a-Si) film deposited on the substrate prepared by our method results in enlargement of poly-Si grains, compared with conventional laser recrystallization. Poly-Si thin film transistor also shows much improved electrical perfbrmance which directly reflects the quality of poly-Si film recrystallized by our method.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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