Skip to main content Accessibility help
×
Home
Hostname: page-component-cf9d5c678-w9nzq Total loading time: 0.223 Render date: 2021-07-27T00:24:22.396Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Application of ultraviolet radiation to minimize interfacial layer formation during the growth of alternate high-k gate dielectrics on Si

Published online by Cambridge University Press:  21 March 2011

V. Craciun
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
N. D. Bassim
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
J. M. Howard
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
J. Spear
Affiliation:
Philips Analytical, Tempe AZ 85266, USA
S. Bates
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
R. K. Singh
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
Get access

Abstract

Yttrium oxide and barium strontium titanate (BST) thin films were grown directly on Si substrates by the pulsed laser deposition (PLD) technique. Because the optimum oxygen pressure during PLD process is of the order of 10 mTorr, some of the oxygen atoms are trapped inside the grown films and contribute to the growth of a silicon oxide interfacial layer. The use of an UV source during the growth resulted in the reduction of the optimum oxygen pressure and, as a consequence, the amount of trapped oxygen and thickness of the interfacial layer. In addition to that, UV radiation influenced the film morphologies and electrical properties. A further reduction of the interfacial layer was obtained on substrates that were exposed prior to deposition to NH3 for short periods of time under UV radiation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Singh, R. K. and Kumar, D., Mat. Sci. Engr. Reports R22, 113 (1998).CrossRefGoogle Scholar
2. Craciun, V. and Singh, R. K., Electrochem. Solid-State. Lett. 2, 446 (1999).CrossRefGoogle Scholar
3. Craciun, V., Lambers, E. S., Bassim, N. D., Singh, R.K., and Craciun, D., J. Mater. Res. 15 (2000) 488.CrossRefGoogle Scholar
4. Craciun, V., Singh, R.K., Perriere, J., Spear, J., and Craciun, D., J. Electrochem. Soc. 147, 1077 (2000).CrossRefGoogle Scholar
5. Tsoukalas, D. and Tsamis, C., Appl. Phys. Lett. 66, 971 (1994)CrossRefGoogle Scholar
6. Ono, H. and Koyanagi, K., Appl. Phys. Lett. 75, 3521 (1999).CrossRefGoogle Scholar
7. Craciun, V., Howard, J. M., Bassim, N.D., Singh, R. K., MRS Proceedings (2001)Google Scholar
8. Wengenmair, H., Gerlach, J. W., Preckwinkel, U., Stritzker, B., and Rauschenbach, B., Appl. Surf. Sci. 99, 313 (1996).CrossRefGoogle Scholar
9. Craciun, V. and Singh, R. K., Appl. Phys. Lett. 76, 1932, (2000 CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Application of ultraviolet radiation to minimize interfacial layer formation during the growth of alternate high-k gate dielectrics on Si
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Application of ultraviolet radiation to minimize interfacial layer formation during the growth of alternate high-k gate dielectrics on Si
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Application of ultraviolet radiation to minimize interfacial layer formation during the growth of alternate high-k gate dielectrics on Si
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *