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Application of Aluminum Nitride Thin Film for Micromachined Ultrasonic Transducers

Published online by Cambridge University Press:  01 February 2011

Qianghua Wang
Affiliation:
qhuawang@ece.eng.wayne.edu, Wayne State University, Electrical and computer Engineering, 5050 Anthony Wayne Drive #3158, Detroit, Michigan, 48202, United States, (313)-577-2031, (313)-577-1101
Jianzeng Xu
Affiliation:
jianzeng@ece.eng.wayne.edu, Wayne State University, Electrical and computer Engineering, United States
Changhe Huang
Affiliation:
chhuang@ece.eng.wayne.edu, Wayne State University, Electrical and computer Engineering, United States
Gregory W Auner
Affiliation:
gauner@ece.eng.wayne.edu, Wayne State University, Electrical and computer Engineering, United States
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Abstract

This paper reports the fabrication and characterization of micromachined ultrasonic transducers (MUT) based on piezoelectric aluminum nitride (AlN) thin films. The MUT device is composed of an Al/AlN/Al sandwiched structure overlaid on top of a silicon (Si) diaphragm. X-ray diffraction (XRD) scan shows that highly c-axis oriented AlN (002) thin films have been grown on Al/Si(100) substrates. Electrical impedance of the MUT devices is analyzed as a function of frequency. The fundamental resonant frequencies of the devices are found in the range of 65-70 kHz, which are in approximation to the theoretical calculation. The effective coupling factors of the devices are also derived as 0.18.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. Hauptmann, P., Lucklum, R., Puttmer, A., Henning, B., Sens. Actuators A67, 32 (1998).CrossRefGoogle Scholar
2. Valbin, L. and Sevely, L., Proc. SPIE 4559, 95 (2001).CrossRefGoogle Scholar
3. Percin, G., Atalar, A., Degretekin, F.L., and Khuri-Yakub, B. T., Appl. Phys. Lett. 72, 1397 (1998).CrossRefGoogle Scholar
4. Dobois, M. -A. and Muralt, P., Appl. Phys. Lett. 74, 3032 (1999).CrossRefGoogle Scholar
5. Xu, J., Thakur, J. S., Zhong, F., Ying, H., and Auner, G. W., J. Appl. Phys. 94, 212 (2004).CrossRefGoogle Scholar
6. Weaver, W., Timoshenko, S. P., and Young, D. H., Vibration Problems in Engineering, (John Wiley & Sons., 1990) pp. 495500.Google Scholar
7. Auner, G. W., Jin, F., Naik, V. M., and Naik, R., J. Appl. Phys. 85, 7879 (1999).CrossRefGoogle Scholar
8. Ambacher, O., J. Phys. D: Appl. Phys., 31 2653 (1998). 9.CrossRefGoogle Scholar
9. IEEE-UFFC, IEEE Standard on Piezoelectricity 1761987, (1987).Google Scholar