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Anomalous Evolution of Bubbles in Krypton-Implanted SiO2

Published online by Cambridge University Press:  01 February 2011

Hannan Assaf ,
Esidor Ntsoenzok ,
Marie-France Barthe ,
Elisa Leoni ,
Marie-Odile Ruault  and
S. Ashok
Hannan Assaf
Affiliation:
assaf@cnrs-orleans.fr, CNRS, Centre d'Etudes et de Recherches par Irradiation CERI, 3A rue de la Férollerie, Orléans, 45071, France, +33238257604, +33238630271
Esidor Ntsoenzok
Affiliation:
esidor@cnrs-orleans.fr, CERI-CNRS, 3A, rue de la Férollerie, Orléans, 45071, France
Marie-France Barthe
Affiliation:
barthe@cnrs-orleans.fr, CERI-CNRS, 3A, rue de la Férollerie, Orléans, 45071, France
Elisa Leoni
Affiliation:
elisa.leoni@cnrs-orleans.fr, CERI-CNRS, 3A, rue de la Férollerie, Orléans, 45071, France
Marie-Odile Ruault
Affiliation:
ruault@csnsm.in2p3.fr, CSNSM, CNRS-IN2P3, Batiment 108 - Université Paris Sud XI, Orsay, 91405, France
S. Ashok
Affiliation:
sashok@psu.edu, The Pennsylvania State University, Department of Engineering Science and Mechanics, 212 Earth and Engineering Science Building, University Park, PA, 16802, United States
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Abstract

Thermally grown SiO2 was implanted at room temperature with 220 keV Kr in order to generate bubbles/cavities in the sample. The formation and thermal stability of these bubbles/cavities is studied in this work. Transmission Electron Microscopy (TEM), Rutherford Backscattering Spectrometry (RBS) and Positron Annihilation Spectroscopy (PAS) were used to provide a comprehensive characterisation of defects (bubbles, vacancy, Kr and other types of defects) created by Kr implantation in SiO2 layer. These measurements suggest that the bubbles observed with TEM were a consequence of the interaction between Kr and vacancies (V), with VnXem complexes created in the whole of implanted zone. After annealing, bubbles/cavities disappear from SiO2 due to the strongly desorption of Kr and the decrease in vacancy concentration.

Keywords

Krion-implantationamorphous
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F06-04
Copyright
Copyright © Materials Research Society 2007

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