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Annealing of Pb-Implanted SrTiO3 in The Presence of Water Vapour: A Study Using D2 18O Labelling

Published online by Cambridge University Press:  28 February 2011

J. C. McCallum
Affiliation:
Microelectronics and Materials Technology Centre, Royal Melbourne Institute of Technology, Melbourne, Victoria, GPO Box 2476V, 3001, Australia
T. W. Simpson
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario, Canada, N6A3K7
I. V. Mitchell
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario, Canada, N6A3K7
J. Rankin
Affiliation:
Mary Ingraham Bunting Institute, Cambridge, Massachusetts
L. A. Boatner
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831
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Abstract

We report new measurements of the regrowth behaviour of Pb-implanted SrTiO3 crystals in the presence of water vapour. Doubly labelled water vapour, D2 18O, at greater than 95% enrichment in each isotope has been added to the annealing ambient and depth profiles of D and 18O have been obtained from the regrown crystals using secondary ion mass spectrometry (SIMS). The D and 18O content has also been measured by nuclear reaction analysis (NRA) using the reactions D(3He,p)4 He and 18O(p,α)15 N. The crystals were regrown in a conventional furnace under a controlled gas ambient and time-resolved optical reflectivity (TRR) was used to dynamically monitor the regrowth rate during the anneal. An enhancement of the solid-phase epitaxial regrowth rate is observed when water vapour is added to the annealing ambient. This rate increase is accompanied by incorporation of D throughout the regrown layer. 18O is incorporated into the lattice but does not appear to penetrate deep enough to influence the regrowth rate.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

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Annealing of Pb-Implanted SrTiO3 in The Presence of Water Vapour: A Study Using D2 18O Labelling
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