Skip to main content Accessibility help
×
Home
Hostname: page-component-99c86f546-7mfl8 Total loading time: 1.144 Render date: 2021-12-05T09:26:13.358Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Annealing Effects of Indium-Tin Oxide Films Produced by Atmospheric RF Plasma Deposition Technique

Published online by Cambridge University Press:  15 February 2011

R. W. Moss
Affiliation:
Alfred University, Alfred, New York, 14802
D. H. Lee
Affiliation:
Alfred University, Alfred, New York, 14802
K. D. Vuong
Affiliation:
Alfred University, Alfred, New York, 14802
J. Ryan
Affiliation:
Alfred University, Alfred, New York, 14802
J. Fagan
Affiliation:
Alfred University, Alfred, New York, 14802
R. A. Condrate
Affiliation:
Alfred University, Alfred, New York, 14802
X. W. Wang
Affiliation:
Alfred University, Alfred, New York, 14802
Get access

Abstract

Thin-films of indium-tin oxide (ITO) on soda-lime-silicate (SLS) glass were fabricated using an atmospheric RF plasma mist deposition process. Some of the films were deposited at substrate temperatures between 400 C and 500 C, and were subsequently annealed at 400 C and 530 C for 1 hour. Conductivity was improved due to post-annealing. Film thickness, particle size, film morphology and crystallite size were characterized. The structural changes on the glass and the ITO film were investigated by DRIFT spectroscopy.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Williams, J.A., Shen, C. Q., Vuong, K.D., Tenpas, E., Helin, E., Condrate, R.A. Sr., Lee, D.H., Wang, H., Fagan, J., and Wang, X.W., Mat. Res. Soc. Proc. 355, Pittsburgh, PA 1995, p. 563.Google Scholar
2. Vuong, K.D., Schueselbauer, E., Lee, D.H., Williams, J.A., and Wang, X.W., in Thermal Spray Proc. of the 8th National Thermal Spray Conference, Houston, TX 1995, p. 93,Google Scholar
3. N., Balasubramanian, N., Subrahmanyam, Mater. Sci. and Engineering, vB1, p. 279 (1988).Google Scholar
4. Husung, R.D. and Doremus, R.H., J. Mater. Res. 5, p. 2209 (1990).CrossRefGoogle Scholar
5. Clark, D.E., Dilamore, M.F., Ethride, E.C., and Hench, L.L., Glass Technol. 18, p. 121 (1977).Google Scholar
6. Clark, D.E., Dilamore, M.F., Ethride, E.C., Hench, L.L., J. Am. Ceram. Soc. 59, p. 62 (1976).CrossRefGoogle Scholar
7. Zhou, X., Johnson, P.E., Condrate, R.A., Sr., Guo, Y.M., Mater. Letters 9, p. 207 (1990).CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Annealing Effects of Indium-Tin Oxide Films Produced by Atmospheric RF Plasma Deposition Technique
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Annealing Effects of Indium-Tin Oxide Films Produced by Atmospheric RF Plasma Deposition Technique
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Annealing Effects of Indium-Tin Oxide Films Produced by Atmospheric RF Plasma Deposition Technique
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *