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Angular-Resolved ESCA Studies of Cadmium Arachidate Monolayers on Si (100): Inelastic Mean-Free Path and Depth Profile Analysis

Published online by Cambridge University Press:  15 February 2011

Shelli R. Letellier
Affiliation:
University of Washington, Center for Bioengineering Seattle, WA, 98195
Viola Vogel
Affiliation:
University of Washington, Center for Bioengineering Seattle, WA, 98195
Buddy D. Ratner
Affiliation:
University of Washington, Center for Bioengineering Seattle, WA, 98195 Department of Chemical Engineering 2, Seattle, WA, 98195
Deborah Leach-Scampavia
Affiliation:
Department of Chemical Engineering 2, Seattle, WA, 98195
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Abstract

Angular-resolved ESCA was used to study single cadmium arachidate monolayers transferred to Si (100) wafers by the Langmuir-Blodgett technique. We find the monolayers to be of high integrity with respect to those defects which enhance the escape probability of substrate photoelectrons through the overlayer. The inelastic mean-free pathlengths of Si (2p) and C (1s) electrons were calculated to be 49±6 Å and 45±6 Å for the kinetic energies of 1388 eV and 1202 eV, respectively. The overall ordering of the hydrocarbon chains is less than for alkane thiols assembled on noble metals. We find that the precision of the Tyler algorithm to deconvolute angular-resolved ESCA data into depth profiles is accurate within 10% for predicting the thickness of the hydrocarbon overlayer but less precise for intermediate layers.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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Angular-Resolved ESCA Studies of Cadmium Arachidate Monolayers on Si (100): Inelastic Mean-Free Path and Depth Profile Analysis
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Angular-Resolved ESCA Studies of Cadmium Arachidate Monolayers on Si (100): Inelastic Mean-Free Path and Depth Profile Analysis
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