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Analysis of Leakage Currents through PLD Grown Ultrathin a-LaGdO3 Based High-k Metal Gate Devices

Published online by Cambridge University Press:  28 June 2013

Shojan P. Pavunny
Affiliation:
Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, PR 00936-8377, USA.
Pankaj Misra
Affiliation:
Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, PR 00936-8377, USA.
Reji Thomas
Affiliation:
Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, PR 00936-8377, USA.
Ashok Kumar
Affiliation:
Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, PR 00936-8377, USA. Materials Physics and Engineering Division, National Physical Laboratory, CSIR, New Delhi, 110 012, India.
James F. Scott
Affiliation:
Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, PR 00936-8377, USA. Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge CB3 OHE, UK.
Ram S. Katiyar
Affiliation:
Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, PR 00936-8377, USA.
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Abstract

A detailed analysis of leakage current density-gate voltage measurements of gate stacks composed of PLD grown ultra thin films of LaGdO3 (LGO) on p-type silicon substrates with 8.4 Å EOT is presented. Temperature dependent leakage measurements revealed that forward bias current was dominated by Schottky emission over trap assisted tunneling below 1.2 MV/cm and quantum mechanical tunneling above this field. The physical origin of the reverse bias current was found to be a combination of Schottky emission and trap assisted tunneling. Low leakage current densities in the range from 2.3×10-3 to 29×10-3 A/cm2 were recorded for films with EOT from 1.8 to 0.8 nm, that are at least four or more orders below the ITRS specifications and its SiO2 competitors.

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Articles
Copyright
Copyright © Materials Research Society 2013 

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Analysis of Leakage Currents through PLD Grown Ultrathin a-LaGdO3 Based High-k Metal Gate Devices
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