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An Overview of FeRAM Technology for High Density Applications

Published online by Cambridge University Press:  21 March 2011

Nicolas Nagel
Affiliation:
Infineon Technologies, Memory Product Division Otto-Hahn Ring. 6, 81739 Munich, Germany
Thomas Mikolajick
Affiliation:
Infineon Technologies, Memory Product Division Otto-Hahn Ring. 6, 81739 Munich, Germany
Igor Kasko
Affiliation:
Infineon Technologies, Memory Product Division Otto-Hahn Ring. 6, 81739 Munich, Germany
Walter Hartner
Affiliation:
Infineon Technologies, Memory Product Division Otto-Hahn Ring. 6, 81739 Munich, Germany
Manfred Moert
Affiliation:
Infineon Technologies, Memory Product Division Otto-Hahn Ring. 6, 81739 Munich, Germany
Cay-Uwe Pinnow
Affiliation:
Infineon Technologies, Memory Product Division Otto-Hahn Ring. 6, 81739 Munich, Germany
Christine Dehm
Affiliation:
Infineon Technologies, Memory Product Division Otto-Hahn Ring. 6, 81739 Munich, Germany
Carlos Mazure
Affiliation:
Infineon Technologies, Memory Product Division Otto-Hahn Ring. 6, 81739 Munich, Germany
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Abstract

Ferroelectric random access memories (FeRAMs) are new types of memories especially suitable for mobile applications due to their unique properties such as nonvolatility, small DRAM - like cell size, fast read and write as well as low voltage / low power behavior. Although standard CMOS processes can be used for frontend and backend / metallization processes, FeRAM technology development has to overcome major challenges due to new materials used for capacitor formation. In this paper, advantages and disadvantages of different ferroelectric materials and major development issues for high density applications are discussed. Results of a 0.5μm ferroelectric process using SrBi2Ta2O9 (SBT) as ferroelectric layer, Pt as electrode material, and 2-layer tungsten / aluminum metallization are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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