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Amorphous/Crystalline Structure And Phase Transformations In Metastable Semiconducting Ge1−xSnx

Published online by Cambridge University Press:  15 February 2011

Susanne M. Lee
Affiliation:
Lawrence Livermore National Laboratory, 7000 East Ave., Livermore, CA 94550 and, Lawrence University, Dept. of Physics, P. O.Box 599, Appleton, WI 54912
Katayun Barmak
Affiliation:
Department of Materials Science and Engineering, Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015.
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Abstract

The semiconducting crystalline alloys, Ge1−xSnx, are of interest due to theoretical predictions about their electronic band structures which make them useful in infrared photodetectors. However the composition region where these alloys have the desired properties is greater than the equilibrium solid solubility limit of Sn in Ge (x<0.01). We have circumvented the solubility limits and produced thin (2000Å) and thick (4–8Μm) films of Gei.xSnx (x<0.31) by rf sputtering. Differential scanning calorimetry (DSC) Measurements were performed to study grain growth and crystallization processes in these highly metastable semiconductors. X-ray and electron diffraction measurements indicated the materials were amorphous, but the fact that some of the films were fine grained polycrystalline samples only became apparent in their DSC spectra. We present models that describe quantitatively the transformation behavior in both sets of films.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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