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Amorphous Silicon Solar Cells Techniques for Reactive Conditions

Published online by Cambridge University Press:  15 February 2011

Satoshi Shimizu ,
Kojiro Okawa ,
Toshio Kamiya ,
C.M. Fortmann  and
Isamu Shimizu
Satoshi Shimizu
Affiliation:
The Graduate School, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, JAPAN
Kojiro Okawa
Affiliation:
The Graduate School, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, JAPAN
Toshio Kamiya
Affiliation:
The Graduate School, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, JAPAN
C.M. Fortmann
Affiliation:
The Graduate School, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, JAPAN
Isamu Shimizu
Affiliation:
The Graduate School, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, JAPAN
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Abstract

The preparation of amorphous silicon films and solar cells using SiH2Cl2 source gas and electron cyclotron resonance assisted chemical vapor deposition (ECR-CVD) was investigated. By using buffer layers to protect previously deposited layers improved a-Si:H(Cl) solar cells were prepared and studied. The high quality a-Si:H(Cl) films used in this study exhibited low defect densities (~1015cm-3) and high stability under illumination even when the deposition rate was increased to ~15A/s. The solar cells were deposited in the n-i-p sequence. These solar cells achieved VOC values of ~ 0.89V and ~ 3.9% efficiency on Ga doped ZnO (GZO) coated specular substrate. The a-Si:H(C1) electron and hole μτ products were ~10-8cm2/V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 791
Copyright
Copyright © Materials Research Society 1999

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References

1. Yang, J., Banerjee, A., and Guha, S., Appl.Phys.Lett. 70, 2975 (1997).Google Scholar
2. Azuma, M., Yokoi, T. and Shimizu, I., Mater.Res.Soc.Symp.Proc. 336, 517 (1994).Google Scholar
3. Azuma, M., Yokoi, T. and Shimizu, I., J.Non-Cryst.Solids 198–200, 419 (1996).Google Scholar
4. Stutzmann, M., Jackson, W.B., Tsai, C.C., Phys, Rev. B32, 23 (1985).Google Scholar
5.Topics in Applied Physics 55, The Physics of Hydrogenated Amorphous Silicon 1, edited by Joannopoulos, J.D. and Lucovsky, G. (Springer-Verlag, Berlin, Heidelberg, New york, Tokyo, 1984), p.99 Google Scholar
6. Fortmann, C.M. in Plasma Deposition of Amorphous Silicon-Based Materials, edited by Bruno, G., Capezzuto, P. and Madan, A. (Academic Press, New York, 1995) p.131 Google Scholar
7. Fortmann, C.M., in AIP Conf. Proc. 157, Stability of Amorphous Silicon Alloy Material and Devices, edited by Stafford, B.L. and Sabisky, E. (American Institute of Physics, New York, 1987) p.103 Google Scholar
8. Fischer, D., Wyrsh, N., Fortmann, C.M., Shah, A.V., IEEE PVSEC (1993)Google Scholar
9. Kanbe, M. et al. this conferenceGoogle Scholar