Hostname: page-component-5d59c44645-mrcq8 Total loading time: 0 Render date: 2024-02-21T13:05:59.403Z Has data issue: false hasContentIssue false

Ammonothermal growth of GaN utilizing negative temperature dependence of solubility in basic ammonia

Published online by Cambridge University Press:  01 February 2011

Tadao Hashimoto
Affiliation:
ERATO/JST UCSB group, Santa Barbara, CA 93106–5050, USA
Kenji Fujito
Affiliation:
ERATO/JST UCSB group, Santa Barbara, CA 93106–5050, USA
Feng Wu
Affiliation:
ERATO/JST UCSB group, Santa Barbara, CA 93106–5050, USA
Benjamin A. Haskell
Affiliation:
ERATO/JST UCSB group, Santa Barbara, CA 93106–5050, USA
Paul T. Fini
Affiliation:
ERATO/JST UCSB group, Santa Barbara, CA 93106–5050, USA
James S. Speck
Affiliation:
ERATO/JST UCSB group, Santa Barbara, CA 93106–5050, USA
Shuji Nakamura
Affiliation:
ERATO/JST UCSB group, Santa Barbara, CA 93106–5050, USA
Get access

Abstract

Ammonothermal growth of GaN was studied to determine its eventual utility for mass production of GaN bulk crystals. Dissolution of GaN in supercritical ammonia with 1 M NaNH2 was investigated through a weight loss method. The time dependence of the weight loss was examined at 500°C and 525°C. Since the weight loss did not reach saturation as a function of time, the solubility limit was not realized. However, experiments demonstrate that GaN has a negative temperature dependence of solubility in supercritical ammonobasic solutions. Based on this result, GaN was grown via fluid transport from metallic Ga to a free-standing GaN single crystal seed by placing the seed crystal in a higher temperature zone and the nutrient in a lower temperature zone. GaN films with thickness of 5 μm (Ga face) and 4 μm (N face) were simultaneously grown on the seed in three days. The surface morphology, optical property, and defect density were found to be different for films on Ga face and N face.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Porowski, S., MRS Internet J. of Nitride Semicond. Res. 4S1, (1999) G1.3 Google Scholar
[2] Inoue, T., Seki, Y., Oda, O., Kurai, S., Yamada, Y., and Taguchi, T., Phys. Stat. Sol. (b) 223 (2001) 15 Google Scholar
[3] Yamane, H., Shimada, M., Sekiguchi, T., DiSalvo, F.J., J. Cryst. Growth 186 (1998) 8 Google Scholar
[4] Kawamura, F., Morishita, M., Omae, K., Yoshimura, M., Mori, Y., and Sasaki, T., Jpn. J. Appl. Phys. 42 (2003) L879 Google Scholar
[5] Dwilinski, R., Doradzinski, R., Garczynski, J., Sierzputowski, L., Palczewska, M., Wysmolek, A., and Kaminska, M., MRS Internet J. of Nitride Semicond. Res. 3 (1998) 25 Google Scholar
[6] Ketchum, D.R. and Kolis, J.W., J. Cryst. Growth, 222 (2001) 431 Google Scholar
[7] Purdy, A.P., Jouet, R. J., and George, C.F., Cryst. Growth and Design 2 (2002) 141 Google Scholar
[8] Yoshikawa, A., Ohshima, E., Fukuda, T., Tsuji, H., Ohshima, K., J. Cryst. Growth 260 (2004) 67 Google Scholar
[9] Hashimoto, T., Fujito, K., Haskell, B. A., Fini, P. T., Speck, J. S., and Nakamura, S., to be published in J. Cryst. GrowthGoogle Scholar
[10] Haskell, B.A., Wu, F., Craven, M.D., Matsuda, S., Fini, P.T., Fujii, T., Fujito, K., DenBaars, S.P., Speck, J.S., and Nakamura, S., Appl. Phys. Lett. 83 (2003) 644 Google Scholar
[11] Byrappa, K. and Yoshimura, M., Handbook of Hydrothermal Technology, Chapter 4, (Noyes Publications, 2001)Google Scholar
[12] Dwilinski, R.T. et.al., United States Patent No. 6, 656,615 B2 (2003)Google Scholar
[13] Hoffmann, A., Christen, J., Siegle, H., Bertram, F., Schmidt, D., Eckey, L., Thomsen, C., and Hiramatsu, K., Mat. Sci. Eng. B50 (1997) 192 Google Scholar