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Ammonothermal growth of GaN utilizing negative temperature dependence of solubility in basic ammonia

Published online by Cambridge University Press:  01 February 2011

Tadao Hashimoto
Affiliation:
ERATO/JST UCSB group, Santa Barbara, CA 93106–5050, USA
Kenji Fujito
Affiliation:
ERATO/JST UCSB group, Santa Barbara, CA 93106–5050, USA
Feng Wu
Affiliation:
ERATO/JST UCSB group, Santa Barbara, CA 93106–5050, USA
Benjamin A. Haskell
Affiliation:
ERATO/JST UCSB group, Santa Barbara, CA 93106–5050, USA
Paul T. Fini
Affiliation:
ERATO/JST UCSB group, Santa Barbara, CA 93106–5050, USA
James S. Speck
Affiliation:
ERATO/JST UCSB group, Santa Barbara, CA 93106–5050, USA
Shuji Nakamura
Affiliation:
ERATO/JST UCSB group, Santa Barbara, CA 93106–5050, USA
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Abstract

Ammonothermal growth of GaN was studied to determine its eventual utility for mass production of GaN bulk crystals. Dissolution of GaN in supercritical ammonia with 1 M NaNH2 was investigated through a weight loss method. The time dependence of the weight loss was examined at 500°C and 525°C. Since the weight loss did not reach saturation as a function of time, the solubility limit was not realized. However, experiments demonstrate that GaN has a negative temperature dependence of solubility in supercritical ammonobasic solutions. Based on this result, GaN was grown via fluid transport from metallic Ga to a free-standing GaN single crystal seed by placing the seed crystal in a higher temperature zone and the nutrient in a lower temperature zone. GaN films with thickness of 5 μm (Ga face) and 4 μm (N face) were simultaneously grown on the seed in three days. The surface morphology, optical property, and defect density were found to be different for films on Ga face and N face.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

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