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Alternative Catalysts For Si-Technology Compatible Growth Of Si Nanowires

Published online by Cambridge University Press:  01 February 2011

Francesca Iacopi
Affiliation:
iacopi@imec.be, IMEC, SPDT, Kapeldreef 75, Leuven, 3001, Belgium
Philippe M Vereecken
Affiliation:
vereeck@imec.be, IMEC, SPDT, Kapeldreef 75, Leuven, 3001, Belgium
Marc Schaekers
Affiliation:
schaekers@imec.be, IMEC, SPDT, Kapeldreef 75, Leuven, 3001, Belgium
Matty Caymax
Affiliation:
caymax@imec.be, IMEC, SPDT, Kapeldreef 75, Leuven, 3001, Belgium
Nele Moelans
Affiliation:
nele.moelans@mtm.kuleuven.be, Katholieke Universiteit Leuven, Metallurgy and Materials Engineering, Leuven, 3001, Belgium
Bart Blanpain
Affiliation:
bart.blanpain@mtm.kuleuven.be, Katholieke Universiteit Leuven, Metallurgy and Materials Engineering, Leuven, 3001, Belgium
Christophe Detavernier
Affiliation:
christophe.detavernier@ugent.be, Universiteit Gent, Solid State Physics, Gent, 9000, Belgium
Jan D'Haen
Affiliation:
jan.dhaen@imec.be, IMOMEC, Hasselt, 3590, Belgium
Hefin Griffiths
Affiliation:
hefin.griffiths@oxinst.co.uk, Oxford Instruments, Plasma Technology, Bristol, BS49 4AP, United Kingdom
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Abstract

The use of Au nanoparticles as catalysts for growth of Si nanowires poses fundamental reliability concerns for applications in Si semiconductor technology. In this work we show that the choice of catalysts can be broadened when the need for catalytic precursor dissociation is eliminated. However, the requirements for selective deposition in a gas phase transport -limited regime become stringent. When competing deposition of amorphous Si can bury the particles faster than the incubation time for VLS growth, no nanowire growth will be initiated. We show that the use of a catalyst such as In, already in a liquid form at the growth temperature, is effective. Therefore, the choice of VLS catalysts among the low melting point metals from the III, IV and V groups is suggested.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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