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Accurate analysis of the piezopotential and the stored energies in laterally bent piezo-semiconductive NWs

Published online by Cambridge University Press:  28 June 2013

Rodolfo Araneo*
Affiliation:
DIAEE - Sapienza University of Rome, Via Eudossiana 18, 00184, Rome
Giampiero Lovat
Affiliation:
DIAEE - Sapienza University of Rome, Via Eudossiana 18, 00184, Rome
Christian Falconi
Affiliation:
Department of Electronic Engineering, University of Rome “Tor Vergata”, Via del Politecnico 1, 00133, Rome CNR IDASC, Via Fosso del Cavaliere, 100, 00133 Rome, Italy
Andrea Notargiacomo
Affiliation:
Institute of Photonics and Nanotechnology – CNR, Via Cineto Romano 42, 00156, Rome , Italy
Antonio Rinaldi
Affiliation:
University of L'Aquila, International Research Center for Mathematics & Mechanics of Complex System (MEMOCS), Via S. Pasquale, 04012, Cisterna di Latina (LT), Italy ENEA ,C.R. Casaccia, Via Anguillarese 301, Santa Maria di Galeria, 00123, Rome, Italy
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Abstract

Here we study the piezopotential, the carrier concentration, and the stored energies in laterally bent piezo-semiconductive NWs with total-bottom contact. Moreover, we give reasons for the well-known existence of two regions where the piezopotential has an opposite sign in comparison with the rest of the NW. Finally, we provide an upper limit to the static mechanicalto-electrical conversion efficiency by computing the ratio between the total stored electrostatic energy and the total (mechanical and electrostatic) stored energy. Our results can provide guidelines for designing devices based on laterally bent piezoelectric NWs.

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Articles
Copyright
Copyright © Materials Research Society 2013 

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References

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Accurate analysis of the piezopotential and the stored energies in laterally bent piezo-semiconductive NWs
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Accurate analysis of the piezopotential and the stored energies in laterally bent piezo-semiconductive NWs
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