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4H-SIC Dmosfets for High Frequency Power Switching Applications

Published online by Cambridge University Press:  01 February 2011

Sei-Hyung Ryu
Affiliation:
Cree, Inc., 4600 Silicon Drive Durham, NC 27703
Anant K. Agarwal
Affiliation:
Cree, Inc., 4600 Silicon Drive Durham, NC 27703
James Richmond
Affiliation:
Cree, Inc., 4600 Silicon Drive Durham, NC 27703
John W. Palmour
Affiliation:
Cree, Inc., 4600 Silicon Drive Durham, NC 27703
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Abstract

Very high critical field, reasonable bulk electron mobility, and high thermal conductivity make 4H-Silicon carbide very attractive for high voltage power devices. These advantages make high performance unipolar switching devices with blocking voltages greater than 1 kV possible in 4H-SiC. Several exploratory devices, such as vertical MOSFETs and JFETs, have been reported in SiC. However, most of the previous works were focused on high voltage aspects of the devices, and the high speed switching aspects of the SiC unipolar devices were largely neglected. In this paper, we report on the static and dynamic characteristics of our 4H-SiC DMOSFETs. A simple model of the on-state characteristics of 4H-SiC DMOSFETs is also presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

[1] Bhatnagar, M. and Baliga, B. J., “Comparison of 6H-SiC, 3C-SiC, and Si for power devices,” IEEE Transactions on Electron Devices, Vol. 40, p. 645655, March 1993.CrossRefGoogle Scholar
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