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3D Structure Fabrication by FIB Milling and Deposition

Published online by Cambridge University Press:  26 February 2011

Toshiaki Fujii
Affiliation:
toshiaki.fujii@siint.co.jp, SII NanoTechnology Inc., Engineering Department, 36-1 Takenoshita, Oyama-cho, Sunto-gun, 412-0026, Japan
Koji Iwasaki
Affiliation:
koji.iwasaki@siint.co.jp, SII NanoTechnology Inc., Oyama-cho, Sunto-gun, Shizuoka, 410-1393, Japan
Masanao Munekane
Affiliation:
masanao.munekane@siint.co.jp, SII NanoTechnology Inc., Oyama-cho, Sunto-gun, Shizuoka, 410-1393, Japan
Yo Yamamoto
Affiliation:
yo.yamamoto@siint.co.jp, SII NanoTechnology Inc., Oyama-cho, Sunto-gun, Shizuoka, 410-1393, Japan
Toshitada Takeuchi
Affiliation:
toshitada.takeuchi@siint.co.jp, SII NanoTechnology Inc., Oyama-cho, Sunto-gun, Shizuoka, 410-1393, Japan
Masakatsu Hasuda
Affiliation:
masakatsu.hasuda@siint.co.jp, SII NanoTechnology Inc., Oyama-cho, Sunto-gun, Shizuoka, 410-1393, Japan
Yutaka Ikku
Affiliation:
yutaka.ikku@siint.co.jp, SII NanoTechnology Inc., Oyama-cho, Sunto-gun, Shizuoka, 410-1393, Japan
Hiromi Tashiro
Affiliation:
hiromi.tashiro@siint.co.jp, SII NanoTechnology Inc., Oyama-cho, Sunto-gun, Shizuoka, 410-1393, Japan
Tatsuya Asahata
Affiliation:
tatsuya.asahata@siint.co.jp, SII NanoTechnology Inc., Oyama-cho, Sunto-gun, Shizuoka, 410-1393, Japan
Masahiro Kiyohara
Affiliation:
masahiro.kiyohara@siint.co.jp, SII NanoTechnology Inc., Oyama-cho, Sunto-gun, Shizuoka, 410-1393, Japan
Takashi Kaito
Affiliation:
takashi.kaito@siint.co.jp, SII NanoTechnology Inc., Oyama-cho, Sunto-gun, Shizuoka, 410-1393, Japan
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Abstract

Focused Ion Beam (FIB) system is equipment used to make a wide variety of micro and Nano structures. Structures can be created using various materials by irradiating focused gallium ion beam on to the surface of specimens and by sputtering, etching and ion beam induced deposition. In order to realize greater diversity for nano construction by using the FIB system, we have developed technologies incorporating:

- Built-in pattern signal generator

- Multiple Gas Unit for gas assisted etching and beam induced deposition

- A precision wheel for the stage.

This latest FIB system has a narrow Ion beam with a diameter of better than 4nm. Beam current is controlled from 0.15pA to 20nA. These performances contribute significantly to the study 3D structures fabrication and modification.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

1. Takashi, Kaito, et al; “Mask Repair Using Focused Ion Beam” Proc. 9th Symp. on ISIAT '85, Tokyo (1985) pp.207210 Google Scholar
2. Mashiko, Y., et al; “A New VLSI Diagnosis Technique: Focused Ion Beam Assisted Multi-level Circuit Probing” 1987 International Reliability Physics SymposiumCrossRefGoogle Scholar
3. Nikawa, K., et al; “New applications of focused ion beam technique to failure analysis and process monitoring of VLSI” 1989 International Reliability Physics SymposiumCrossRefGoogle Scholar
4. Takashi, Nagase, et al; “Fabrication of nano-gap electrodes for measuring electrical properties of organic molecules using a focused ion beam” Thin Solid Films 438–439 (2003) 374377 Google Scholar
5. Shinji, Matsui, et al; “Three-dimensional nanostructure fabrication by focused-ion-beam chemical vapor deposition” JVST B, Vol.18, No. 6, Nov./Dec. 2000, pp.31813184 Google Scholar
6. Yamamoto, T., et al; “3D-nanoelectrodes for visualizing single molecular devices” 7th Int. Conf. Microminiaturized Chem. and Biol. Sys. 5 Oct 2003, Squaw Valley Ca. USA, pp.677680 Google Scholar
7. Hoshino, T., et al; “Development of three-dimensional pattern-generating system for focused-ion-beam chemical-vapor deposition” JVST B, Vol.21, No.6, Nov./Dec. 2003, pp.27322736 Google Scholar
8. Mozerolle, S., et al; “High Precision System for Scanning Electron Microscopes” 4th IWMF Oct.15–17, 2004, Shanghai, China, Vol.1, pp.1722.Google Scholar

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