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3C-SiC Monocrystals Grown on Undulant Si(001) Substrates

Published online by Cambridge University Press:  11 February 2011

Hiroyuki Nagasawa
Affiliation:
Hoya Advanced Semiconductor Technologies Co., Ltd. 1–17–16 Tanashioda, Sagamihara, Kanagawa 229–1125, Japan
Kuniaki Yagi
Affiliation:
Hoya Advanced Semiconductor Technologies Co., Ltd. 1–17–16 Tanashioda, Sagamihara, Kanagawa 229–1125, Japan
Takamitsu Kawahara
Affiliation:
Hoya Advanced Semiconductor Technologies Co., Ltd. 1–17–16 Tanashioda, Sagamihara, Kanagawa 229–1125, Japan
Naoki Hatta
Affiliation:
Hoya Advanced Semiconductor Technologies Co., Ltd. 1–17–16 Tanashioda, Sagamihara, Kanagawa 229–1125, Japan
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Abstract

A novel technique to reduce planar defects in 3C-SiC is to grow it on “undulant-Si” substrates, on which the surface forms countered slopes oriented in the [110] and [110] directions. In the initial stage of 3C-SiC growth, step flow epitaxy occurs on each slope of the substrate, reducing the anti-phase boundaries. Then, the stacking faults in the (111) and (111) planes are gradually annihilated by combining with counter-stacking faults, while those parallel to (111) and (111) vanish. The freestanding 3C-SiC exhibits anisotropy in its electrical properties. The origin of the anisotropy in electrical properties is discussed by referring to the results of X-ray diffraction study.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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