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1.8 kV, 10 mOhm-cm2 4H-SiC JFETs

Published online by Cambridge University Press:  01 February 2011

James D. Scofield
Affiliation:
james.scofield@wpafb.af.mil, Air Force Research Laboratory, AFRL/PRPE, 1950 Fifth St, WPAFB, OH, 45433, United States, 937-255-5949
Sei-Hyung Ryu
Affiliation:
SeiHyung_Ryu@cree.com, CREE, Inc, Advanced Devices, 4600 Silicon Dr, Durham, NC, 27703, United States
Sumi Krishnaswami
Affiliation:
Sumi_Krishnaswami@cree.com, CREE, Inc, Advanced Devices, 4600 Silicon Dr, Durham, NC, 27703, United States
Husna Fatima
Affiliation:
Husna_fatima@cree.com, CREE, Inc, Advanced Devices, 4600 Silicon Dr, Durham, NC, 27703, United States
Anant Agarwal
Affiliation:
anant_agarwal@cree.com, CREE, Inc, Advanced Devices, 4600 Silicon Dr, Durham, NC, 27703, United States
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Abstract

Fabrication and characteristics of high voltage, normally-on JFETs in 4H-SiC are presented. The devices were built on 5x1015 cm-3 doped, 12 μm thick n-type epilayer grown on a n+ 4H-SiC substrate. A specific on-resistance of 10 m Ω-cm2 and a blocking voltage of 1.8 kV were measured. Device characteristics were measured for temperatures up to 300oC. An increase of specific on-resistance by a factor of 5 and a decrease in transconductance were observed at 300oC, when compared to the value at room temperature. This is due to a decrease in bulk electron mobility at elevated temperature. A slight negative shift in pinch-off voltage was also observed at 300oC. The devices demonstrated robust DC characteristics for temperatures up to 300oC, and stable high temperature inverter operation in a power DC-DC converter application, using these devices, is reported in this paper.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

[1] Ryu, S., Agarwal, A., Richmond, J., Palmour, J., Saks, N., and Williams, J., “10 A, 2.4 kV Power DiMOSFETs in 4H-SiC,” IEEE Electron Device Letters, Vol. 23, No. 6, June 2002. pp. 321323.Google Scholar
[2] Krishnaswami, S., Agarwal, A., Capell, C., Richmond, J., Ryu, S., Palmour, J., Balachandran, S., Chow, T. P., Bayne, S., Geil, B., Jones, K. A., and Scozzie, C., “1000 V, 30 A SiC bipolar Junction Transistors and Integrated Darlington Pairs,” Materials Science Forum Vols. 483–485, pp. 879900.Google Scholar
[3] Friedrichs, P., Elpelt, R., Schorner, R., Mitlehner, H., and Stephani, D., “Optimization of Vertical Silicon Carbide Field Effect Transistors towards a Cost Attractive SiC Power Switch,” Materials Science Forum Vols. 457–460, pp. 12011204.Google Scholar
[4] Schaffer, W. J., Negley, G. H., Irvine, K. G., and Palmour, J. W., “Conductivity Anistropy In Epitaxial 6H and 4H SiC,” Mat. Res. Soc. Symp. Proc. Vol. 339 (1994), pp. 595600.CrossRefGoogle Scholar

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