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A 3D Soft-EHL Model for Simulating Feature-scale Defects in Advanced Node ICs

Published online by Cambridge University Press:  10 July 2013

Jonatan A. Sierra-Suarez ,
Gagan Srivastava  and
C. Fred Higgs
Jonatan A. Sierra-Suarez
Affiliation:
Electrical and Computer Engineering Department Carnegie Mellon University, Pittsburgh, PA 15232, U.S.A.
Gagan Srivastava
Affiliation:
Mechanical Engineering Department Carnegie Mellon University, Pittsburgh, PA 15232, U.S.A.
C. Fred Higgs
Affiliation:
Electrical and Computer Engineering Department Carnegie Mellon University, Pittsburgh, PA 15232, U.S.A. Mechanical Engineering Department Carnegie Mellon University, Pittsburgh, PA 15232, U.S.A.
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Abstract

A new multiphysics, multiscale framework is presented which is capable of capturing and predicting both wafer-scale and feature-scale defects. Through physics-based modeling, the empirical wear/Preston coefficient often found in popular feature scale models has been eliminated. Simulation results show the topography evolution of an actual metal 1 layout between two dies located in different positions on a wafer during the CMP process.

Keywords

simulationnanoscaleCMP
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1560: Symposium BB – Evolutions in Planarization—Equipment, Materials, Techniques and Applications , 2013 , mrss13-1560-bb02-02
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Kim, A. T., Seok, J., Tichy, J. A., and Cale, T. S., “A multiscale elastohydrodynamic contact model for CMP,” Journal of the Electrochemical Society, vol. 150, pp. G570–G576, 2003.CrossRefGoogle Scholar
Noh, K., Saka, N., and Chun, J.-H., “A Multi-scale Model for Copper Dishing in Chemical-Mechanical Polishing,” 2005.Google Scholar
Tripathi, S., Monvoisin, A., Dornfeld, D., and Doyle, F. M., “CMP Modeling as a part of Design for Manufacturing,” in Planarization/CMP Technology (ICPT), 2007 International Conference on, 2007, pp. 1–6.Google Scholar
Wang, X., Karra, P., Chandra, A., Bastawros, A., Biswas, R., Sherman, P., and Yao, L., “A Multi-Scale Predictive Model for Wafer Surface Evolution During a CMP Process Incorporating Slurry Evolution,” 2007.Google Scholar
Shan, L., Levert, J., Meade, L., Tichy, J., and Danyluk, S., “Interfacial fluid mechanics and pressure prediction in chemical mechanical polishing,” Journal of tribology, vol. 122, pp. 539–543, 2000.CrossRefGoogle Scholar
Ouma, D. O., Boning, D. S., Chung, J. E., Easter, W. G., Saxena, V., Misra, S., and Crevasse, A., “Characterization and modeling of oxide chemical-mechanical polishing using planarization length and pattern density concepts,” Semiconductor Manufacturing, IEEE Transactions on, vol. 15, pp. 232–244, 2002.CrossRefGoogle Scholar
Terrell, E. J. and HIGGS, C. F., “A particle-augmented mixed lubrication modeling approach to predicting chemical mechanical polishing,” Journal of tribology, vol. 131, 2009.CrossRefGoogle Scholar
Johnson, K. L., Contact mechanics: Cambridge university press, 1987.Google Scholar
Luo, J. and Dornfeld, D. A., “Material removal mechanism in chemical mechanical polishing: theory and modeling,” Semiconductor Manufacturing, IEEE Transactions on, vol. 14, pp. 112–133, 2001.Google Scholar