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2-Dimensional Controlled Large Lateral Grain Growth on the Floating Amorphous Silicon Film by Excimer Laser Recrystallization

Published online by Cambridge University Press:  01 February 2011

In-Hyuk Song ,
Su-Hyuk Kang ,
Woo-Jin Nam  and
Min-Koo Han
In-Hyuk Song
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail:ihsong@emlab.snu.ac.kr
Su-Hyuk Kang
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail:ihsong@emlab.snu.ac.kr
Woo-Jin Nam
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail:ihsong@emlab.snu.ac.kr
Min-Koo Han
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail:ihsong@emlab.snu.ac.kr
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Abstract

We have successfully obtained large lateral grains with well-controlled grain boundary. The proposed excimer laser annealing (ELA) method produces 2-dimensionally controlled grain growth because the temperature gradient is induced in two directions. Along the channel direction, the floating active structure produces large thermal gradient due to very low thermal conductivity of the air-gap. Along the perpendicular direction to the channel, the surface tension effect also produces thermal gradient. The proposed ELA method can control the grain boundary perpendicular and parallel to current path with only one laser irradiation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A17.9
Copyright
Copyright © Materials Research Society 2003

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