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1/f2 Noise and Electromigration in Al-Cu Interconnects

Published online by Cambridge University Press:  15 February 2011

Michael L. Dreyer
Michael L. Dreyer*
Affiliation:
Motorola, Inc., 2200 West Broadway Road, Mesa, AZ 85202
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Abstract

Electromigration in Al-1.5%Cu interconnects was studied using a direct current (d.c.) induced 1/f2 noise spectrum. The interconnects were fabricated with a multi-step sputter deposition process, with deposition temperatures of 25°C, 300° C, and 475°C. The resulting microstructures were analyzed using SEM and TEM, and grain size distribution parameters were measured. The minimum temperature at which 1/f2 noise could be detected was found to depend on the deposition temperature; for the 25°C, 300°C, and 475°C depositions the lowest temperature at which 1/f2 noise could be measured was 190°C, 220°C, and 265°C, respectively. The activation energy of 1/f2 noise was measured and compared with the electromigration activation energy. The noise activation energy was found to depend on deposition temperature; 0.56 eV, 0.64 eV, and 0.96 eV for the 25°C, 300°C, and 475° C depositions, respectively. SEM analysis of the samples after measurement show initial stages of void and hillock formation. Corresponding electromigration activation energies, 0.56 eV, 0.69 eV, and 1.04 eV were also dependent on deposition temperature. Noise measurements of interconnects made prior to electromigration testing were highly correlated with the electromigration failure times.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 225: Symposium G – Materials Reliability Issues in Microelectronics , 1991 , 59
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Hunnington, H.B. and Grone, A. R., J. Phys. Chem. Solids, 20, 76–77, (1961).Google Scholar
2. Black, J., Proc. of IEEE, 57, 1587–1594 (1969).Google Scholar
3. Cottle, J.G. and Chen, T.M., Proc. of IEEE SE-Conf., 1, 166–170, (1987)Google Scholar
4. Diligenti, A., Neri, B., Bagnoli, P., Barsanti, A., and Rizzo, M., Elec. Dev. Lett., 6 (11), 606–608, (1985).Google Scholar
5. Sun, M.I., Cottle, J.G., and Chen, T.M., in Proc. 10th Intl. Conf. on Noise in Phys. Sys., edited by Ambrozy, A., 21–25 Aug. 1989, Budapest, Hungary, pp. 5 19–522.Google Scholar
6. Hoang, H.H., Nikkel, E.L., McDavid, J.M., and MacNaughton, R.B., J. Appl.Phys., 3, (65), 1044–1047, (1989).Google Scholar
7. Scoggan, G. A., Agarawala, B.N., Peresinni, O.P., and Broujillard, A., Proc. of the 13th Rel. Phys. Symp., 151–158, (1975).Google Scholar
8. Bagnoli, P., Diligenti, A., and Neri, B., J. Appl. Phys.,5 (63), 1448–1450, (1988).Google Scholar
9. Dreyer, M., Proc. of the 29th Rel. Phys. Symp. Tutorial Notes, Chap. 8, pp. 1–61 (1991).Google Scholar
10. Gutt, G., M.S.thesis, University of South Florida, 1989.Google Scholar
11. Chen, T.M., Fang, P., and Cottle, J.G., in Ref. 5, pp. 515–518.Google Scholar